Spin blockade from spin channel to quantum dots and its application to qubit
从自旋通道到量子点的自旋封锁及其在量子位中的应用
基本信息
- 批准号:20241033
- 负责人:
- 金额:$ 31.12万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (A)
- 财政年份:2008
- 资助国家:日本
- 起止时间:2008 至 2010
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
We have investigated surface reaction of Fe electrode and InAs substrate by thermodynamic calculation. We have fabricated a spin transistors with Fe electrode and verified current oscillation which agreed well with theoretical calculation. We have also fabricated an InAs nanowire spin transistor based on Au colloid and observed current oscillation which is presumably originates from spin-orbit interaction. In a spintransistor/quantum dot hybrid structure, we have theoretically demonstrated that spin polarization of 40% would be hard to verify quantum entanglement, but it would be appreciably large signal with 60% spin polarization and clear entanglement would be observable with 80% spin polarization in the spin channel.
我们通过热力学计算研究了Fe电极和InAs衬底的表面反应。我们制作了带有Fe电极的自旋晶体管,并验证了电流振荡,与理论计算吻合良好。我们还制造了基于金胶体的 InAs 纳米线自旋晶体管,并观察到电流振荡,这可能源于自旋轨道相互作用。在自旋晶体管/量子点混合结构中,我们从理论上证明,40%的自旋极化将很难验证量子纠缠,但自旋极化为60%时将产生相当大的信号,而自旋极化为80%时可观察到清晰的纠缠在自旋通道中。
项目成果
期刊论文数量(67)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
4H-SiC基板Si面上に作製したグラフェン単層膜の電子輸送特性
4H-SiC衬底Si表面石墨烯单层薄膜的电子传输性能
- DOI:
- 发表时间:2009
- 期刊:
- 影响因子:0
- 作者:小西敬太;関場亮太;日比野浩樹;陽完治
- 通讯作者:陽完治
Growth rate enhancement of InAs nanowire by molecular beam epitaxy
分子束外延提高 InAs 纳米线的生长速率
- DOI:
- 发表时间:2011
- 期刊:
- 影响因子:0
- 作者:高浪龍平;ら;Sugasawa K.;J. Bubesh Babu and Kanji Yoh
- 通讯作者:J. Bubesh Babu and Kanji Yoh
Anomalous Rashba Effect in Double Cladding InAs-Based Quantum Well
双包层砷基量子阱中的反常拉什巴效应
- DOI:
- 发表时间:2008
- 期刊:
- 影响因子:0
- 作者:Keita Konishi;Kanji Yoh;Hiroki Hibino;Kanji Yoh;陽完治;陽完治;Kanji Yoh;Takashi Matsuda and Kanji Yoh
- 通讯作者:Takashi Matsuda and Kanji Yoh
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YOH Kanji其他文献
YOH Kanji的其他文献
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{{ truncateString('YOH Kanji', 18)}}的其他基金
Demonstration of negative refraction in grapheme pn junction
石墨烯pn结负折射的演示
- 批准号:
23656204 - 财政年份:2011
- 资助金额:
$ 31.12万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Fabrication of Semiconductor Spin Device -Integration of Spin Transistor and Quantum Dots -
半导体自旋器件的制造-自旋晶体管与量子点的集成-
- 批准号:
14205042 - 财政年份:2002
- 资助金额:
$ 31.12万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Research on a single electron transistor with self-assembled quantum dots and its prototype fabrication
自组装量子点单电子晶体管及其原型制作研究
- 批准号:
13555100 - 财政年份:2001
- 资助金额:
$ 31.12万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Fabrication of spin-injection transistor and its application to quantum computing devices
自旋注入晶体管的制备及其在量子计算器件中的应用
- 批准号:
12305019 - 财政年份:2000
- 资助金额:
$ 31.12万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Prototype Fabrication Research of Ultra-sensitive Optical Sensor Using Charging Effect of Quantum Dots
利用量子点充电效应的超灵敏光学传感器原型制作研究
- 批准号:
10555096 - 财政年份:1998
- 资助金额:
$ 31.12万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Fabrication of Quantum Wires Based on Selective Doping Mechanism and Its Application to Functional Devices Using Quantum Parallelism
基于选择性掺杂机制的量子线制备及其在量子并行功能器件中的应用
- 批准号:
10450110 - 财政年份:1998
- 资助金额:
$ 31.12万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Mesoscopic Devices Using InAs Heterostructures and Their Applications
InAs异质结构介观器件及其应用
- 批准号:
06452223 - 财政年份:1994
- 资助金额:
$ 31.12万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
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硅中自旋输运现象的研究及其应用
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- 批准号:
26249039 - 财政年份:2014
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- 批准号:
26630153 - 财政年份:2014
- 资助金额:
$ 31.12万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research