Fabrication of Semiconductor Spin Device -Integration of Spin Transistor and Quantum Dots -

半导体自旋器件的制造-自旋晶体管与量子点的集成-

基本信息

批准号：
14205042
负责人：
YOH Kanji
金额：
$ 32.78万
依托单位：
Hokkaido University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14205042/
关键词：
Spin ferromagnet spin-orbit interaction narrow-gap semiconductor molecular beam epitaxy Spin injection ラシュバ振動

项目摘要

Spin injection from ferromagnet into semiconductor has been investigated and high efficiency spin injection was verified. We have also confirmed the spin transistor operation based on the spin injection technique in Fe/InAs hybrid structure. Itemized research results are listed below.(1)Circular polarization measurements of electroluminescence from Fe/InAs spin diode revealed that the degree of circular polarization of 18-20% and spin injection efficiency of 36-40% is possible.(2)Surface reaction at the Fe/InAs interface has been investigated using Secondary Ion Mass Spectroscopy (SIMS), Transmission Electron Microscopy (TEM) and Reflection High Energy Electron Diffraction (RHEED) during the MBE growth comparing two samples grown at 23℃ and at 175℃. Cross diffusion was observed at the interface in 175℃ sample but not in 23℃ sample. TEM showed atomically abrupt interface in both samples in large part of the region. Although one or two mono-atomic layers of unknown structure were observed in some places, interface reaction was not so clear. RHEED study revealed more island formation of Fe at the initial stage of the Fe growth in 23℃ sample. Lower temperature growth was shown to maintain better interface for better luminescence and spin injection properties.(3)Based on the basic spin injection study in Fe/InAs hybrid system, we have confirmed the spin transistor operation by observing the gate controlled current oscillation in high indiun content InGaAs channel clad by InAlAs barrier layers lattice matched to InP substrate. This is the first observation of spin transistor operation.

已经研究了从铁磁体到半导体的自旋注射，并验证了高效率自旋注入。我们还根据Fe/Inas杂交结构中的自旋注入技术确认了自旋晶体管操作。（1）从Fe/Inas自旋二极管发明的电致发光的循环极化测量表明，可以使用次级质量光谱（simsss and simoson and simoson and Micropoy（Teams）进行了Electronic and Micropopy（TEAMS），可以在FE/INAS界面进行表面反应（2）循环注射效率为36-40％。（RHEED）在MBE生长期间，比较了23℃和175℃时生长的两个样品。在175℃样品中的界面处观察到交叉扩散，但在23℃样品中观察到了交叉扩散。 TEM在该地区大部分地区的两个样品中均显示出原子突然的界面。尽管在某些地方观察到一个或两个未知结构的单原子层，但界面反应并不那么清楚。 Rheed的研究显示，在23℃样品中，在Fe增长的初始阶段，有更多的岛屿形成。 Lower temperature growth was shown to maintain better interface for better luminescence and spin injection properties.(3)Based on the basic spin injection study in Fe/InAs hybrid system, we have confirmed the spin transistor operation by observing the gate controlled current oscillation in high indiun content InGaAs channel clad by InAlAs barrier layers lattice matched to InP substrate.这是对自旋晶体管操作的第一个观察。