The Resonant Tunneling Electron Transport through a Quantum Dot and Its Application

量子点共振隧道电子输运及其应用

基本信息

批准号：
09650342
负责人：
NATORI Kenji
金额：
$ 1.79万
依托单位：
University of Tsukuba
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650342/
关键词：
Quantum dot Resonant tunneling Single electron transistor Ultra-small device Mesoscopic device

项目摘要

The mechanism of the electron resonant transport through a semiconductor quantum dot, and the current-voltage characteristics of a single electron transistor (SET) was investigated. So far, lots of problems have been pointed out for farther down-sizing of the conventional device in integrated electronics, and the SET is attracting an increasing attention as a promising candidate for future successor. As the device size of a SET is scaled down, the island part of the device shifts from a classical system in thermal equilibrium to a quantum mechanical system with discrete energy levels, and the conventional theory of the device operation loses its validity. We have derived a model Hamiltonian describing the property of a simple scaled-down SET including only a single spin-degenerate quantum level, and discussed the transport mechanism. A current map is worked out so as to provide the current value for an arbitrary pair of the gate bias and the drain bias. Such an information is useful for application of the device to the circuit composition. It was shown that the carrier flow dynamics through the dot play an important role in controlling the current magnitude. A more realistic model of an ultra-small SET, fabricated with the silicon rectangular parallelepiped quantum dot is investigated and the current-voltage characteristics is simulated by the Monte Carlo method. The influence of the dot level structure, especially the level degeneracy, on the current-voltage characteristics is analyzed. Also the effect of temperature as well as that of the relative magnitude of tunneling related to the source and the drain is studied. This project has made it possible to understand the overall , though approximate, device behavior of the ultra-small SET for a wide range of the gate bias and the drain bias variation.

研究了通过半导体量子点的电子谐振传输的机理，并研究了单个电子晶体管（SET）的电流特性。到目前为止，已经指出了许多问题，即在集成电子产品中对传统设备的更大尺寸进行缩小，并且该集合吸引了越来越多的关注，作为未来继任者的有前途的候选人。随着设备的设备尺寸的缩小，设备的岛一部分从热平衡的经典系统转移到具有离散能级的量子机械系统，设备操作的常规理论失去了其有效性。我们衍生了一个模型的哈密顿式模型，描述了一个简单的缩小集合的特性，其中仅包括单个自旋排级量子水平，并讨论了传输机制。制定了当前地图，以便为任意对的门偏置和排水偏置提供当前值。这样的信息对于将设备应用于电路组合物很有用。结果表明，通过DOT的载体流动动力学在控制当前幅度方面起着重要作用。研究了一个更现实的超小套件模型，该集合使用硅矩形并行凝集量子点制造，并通过Monte Carlo方法模拟电流 - 电压特性。分析了点水平结构，尤其是水平退化性的影响对电流 - 电压特性的影响。还研究了温度以及与源和排水管相关的隧穿的相对大小的影响。该项目使得超小小的设备的总体设备行为可以理解范围广泛的栅极偏置和排水偏置变化的整体设备行为。