Studies on large area and low temperature fabrication and reaction dynamics of aligned carbon nanostructures

定向碳纳米结构大面积低温制备及反应动力学研究

基本信息

批准号：
14350019
负责人：
HORI Masaru
金额：
$ 9.15万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

项目摘要

The investigation shown in the following as the fabrication of the vertically aligned carbon nanostructures has been carried out, and it succeeded in the creation of the novel vertically aligned carbon nanostructures.1.Fabrication of carbon nanowalls (CNWs)Two-dimensional carbon nanostructures (carbon nanowalls : CNWs) were fabricated using capacitively coupled plasma radio-frequency plasma-enhanced chemical vapor deposition assisted by H radical injection. In the case of the deposition without H radical injection, CNWs were not fabricated. The morphologies of CNWs were dependent on the types of carbon source gases (C_2F_6,CF_4,CHF_3a,CH_4,etc). CNWs were grown on Si,SiO_2, and stainless steel substrates without catalyst, and independent of substrate materials. It succeeded the fabrication of the CNWs with stripe structure by tilting the substrates.2.Dense carbon nanotubesCarbon nanotubes (CNTs) were synthesized using microwave plasma-enhanced chemical vapor deposition. Co nanoparticles as catalyst were prepared using excimer laser ablation. The density of CNTs with a diameter of approximately 6 nm was controllable by changing the deposition time of Co catalytic nanoparticles. CNTs were grown rapidly during the first 3min of growth, then the growth rate of CNTs decreased markedly. At early stage of growth, the CNTs grew at an extremely high rate of 300 nm/s.3.Growth of carbon nanotubes by atmospheric-pressure plasmaA microwave excited non-equilibrium atmospheric pressure plasma source was developed and applied to chemical vapor deposition of carbon nanotubes (CNTs). Multiwalled CNTs were successfully synthesized at a low temperature of 600℃ by using mixtures of He/H_2/CH_4 and He/H_2/CF_4.

通过对垂直排列碳纳米结构的制备进行了如下研究，并成功创建了新型垂直排列碳纳米结构。1.碳纳米墙（CNW）的制备二维碳纳米结构（碳）纳米壁：CNWs）是通过H自由基注入辅助的电容耦合等离子体射频等离子体增强化学气相沉积法制备的。在没有H自由基注入的沉积情况下，CNWs。 CNWs的形貌取决于碳源气体(C_2F_6、CF_4、CHF_3a、CH_4等)的生长在Si、SiO_2和不锈钢衬底上，无需催化剂，且与衬底材料无关。通过倾斜基底成功制备出条状结构的CNWs。2.致密碳纳米管碳纳米管(CNTs)采用微波等离子体增强化学气相沉积法合成了Co纳米颗粒作为催化剂，通过准分子激光烧蚀制备了直径约为6 nm的CNT的密度，通过改变Co催化纳米颗粒的沉积时间来控制快速生长。在生长的前3分钟，碳纳米管的生长速度明显下降，在生长初期，碳纳米管以300的极高速度生长。 nm/s.3.常压等离子体生长碳纳米管研制了微波激发非平衡常压等离子体源，并将其应用于碳纳米管（CNT）的化学气相沉积，在600℃的低温下成功合成了多壁碳纳米管。 ℃，使用He/H_2/CH_4和He/H_2/CF_4的混合物。