Studies of Plasma Etching and Radical Reaction Mechanism Employing Radical Injection Technique

采用自由基注入技术的等离子体蚀刻和自由基反应机理研究

基本信息

批准号：
07650032
负责人：
HORI Masaru
金额：
$ 1.41万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650032/
关键词：
RADICAL PLASMA ETCHING FLUOROCARBON SILICON CF_2 INFRARED LASER ECR レーザー分光酸化シリコン

项目摘要

1. Development of Etching Apparatus Employing Radical Injection TechniqueRadical source was newly developed to generate CF_2 radicals selectively by using pyrolysis of HFPO gas.Radical source was evaluated by infrared laser absorption spectroscopy and so CF_2 radical density was 1x 10^<13>cm^<-3> at 0.67Pa and 900K of the wall of radical source.Therefore, we have successfully developed the CF^2 radical source.2. Controlling of Radical Species and Clarification of Radical Reaction Mechanism Employing Radical Injection TechniqueThe radical source was attached to the ECR etching apparatus and CF_2 radicals were injected into ECR Ar or Ar/H_2 downstream plasma. The fluorocarbon films were analyzed by XPS and FT-IR method.It was found that CF_2 radical was the important precursor for the formation of fluorocarbon films with irradiation of ions.In the case of ECR Ar plasma, fluorine-rich films were formed. Onthe other hand, carbon-rich films were formed in ECR Ar/H_2 plasma.3. High Selectively Etching of SiO_2/Si Employing Radical Injection TechniqueSiO_2/Si Etching was performed by CF_2 radical injection into ECR ECR Ar or Ar/H_2 downstream plasma. With-200V of 400kHz rf biases, the etching selectivity was about 3 in Ar plasma with CF_2 radical injection. On the other hand, the selectivity was infinite in Ar/H_2 plasma.Consequently, we found the high selectively etching of SiO_2/Si was obtained by controlling the CF_2 radicals.

1.采用自由基注入技术的蚀刻设备的开发新开发了自由基源，利用HFPO气体的热解选择性地产生CF_2自由基。通过红外激光吸收光谱评估自由基源，因此CF_2自由基密度为1x 10^<13>cm^< -3>在0.67Pa和900K的自由基源壁上。因此，我们成功开发了CF^2自由基来源.2。采用自由基注入技术控制自由基种类并阐明自由基反应机理将自由基源连接到ECR刻蚀装置上，将CF_2自由基注入ECR Ar或Ar/H_2下游等离子体中。采用XPS和FT-IR方法对氟碳薄膜进行了分析,发现CF_2自由基是离子辐照形成氟碳薄膜的重要前驱体,在ECR Ar等离子体条件下,形成了富氟薄膜。另一方面，在ECR Ar/H_2等离子体中形成了富碳薄膜。 3．采用自由基注入技术对SiO_2/Si进行高选择性刻蚀SiO_2/Si刻蚀是通过将CF_2自由基注入ECR、ECR Ar或Ar/H_2下游等离子体中进行的。在-200V 400kHz 射频偏压下，CF_2 自由基注入的 Ar 等离子体中的刻蚀选择性约为 3。另一方面，Ar/H_2等离子体的选择性是无限的。因此，我们发现通过控制CF_2自由基可以获得SiO_2/Si的高选择性刻蚀。