Development of Next Generation Display Using Carbon Nanowalls

使用碳纳米墙开发下一代显示器

基本信息

批准号：
17206006
负责人：
HORI Masaru
金额：
$ 29.12万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2007
项目状态：
已结题

项目摘要

Analysis in the initial phase, and morphology and construction control of carbon nanowalls (CNWs), which are new two-dimensional carbon nanostructures, were investigated for applying the carbon nanowalls to the field emission devices. In addition, hydrogen plasma process, magnesium dioxide coating, and nitrogen doping were carried out to realizing the CNWs with higher field emission properties.By the analysis of initial growth process using a spectroscopic ellipsometer, it was found that the diamond-like carbon (DIE) thin film formed in the early phase, and then carbon nanowalls constructed by graphene sheets grew up. It was confirmed that the average distance between each CNW and the crystallized structure of graphene sheets were dependence on the pressure, the input power, deposition time of CNWs etc. On the basis of these results, we succeeded in control of morphology and structure of CNWs. From the results of investigation about the effect of the morphology of CNWs on the field emission property, the best performance was realized in the case that the ratio of the height of wall to the distance between walls was 1. Moreover the fabrication of CNWs without the thin film grown in the initial phase using a electron beam excited plasma (EBEP), in addition those CNWs were extremely thin, e. g., a few nm, and completely vertical from the bottom to the surface.The field emission properties of the previous CNWs were a threshold voltage of 6.0 V/μm and current density of 2 μA/cm^2. In this study, those properties were improved to 3.7 V/μm and 10 μA/cm^2, respectively, by hydrogen plasma process after CNWs deposition and magnesium dioxide coating on CNWs. Furthermore, the CNWs with nitrogen doping has the higher current density of 〜1 mA/cm^2. These CNWs have a property enough for applying to the field emission devices.

研究了碳纳米墙(CNW)这种新型二维碳纳米结构的初始阶段分析、形貌和结构控制，以将碳纳米墙应用于场发射器件此外，氢等离子体工艺、二氧化镁涂层。通过椭圆偏振光谱仪对初始生长过程进行分析，发现早期形成了类金刚石碳（DIE）薄膜，然后由石墨烯片构建的碳纳米墙生长，证实每个CNW和石墨烯片的结晶结构之间的平均距离取决于压力、输入功率、CNW的沉积时间等。，我们成功地控制了CNW的形貌和结构，从研究CNW形貌对场发射性能影响的结果来看，在壁高与距离之比的情况下实现了最佳性能。此外，在初始阶段没有使用电子束等离子体激发（EBEP）生长薄膜的 CNW 的制造，此外这些 CNW 非常薄，例如几纳米，并且从底部到完全垂直。之前的CNW的场发射特性为阈值电压6.0V/μm和电流密度2μA/cm^2，在本研究中，这些特性提高到3.7。在 CNW 沉积和 CNW 上涂覆二氧化镁后，分别通过氢等离子体工艺实现 V/μm 和 10 μA/cm^2。此外，氮掺杂的 CNW 具有约 1 mA/cm^2 的更高电流密度。具有足以应用于场致发射器件的性能。