High-tenperature SIM observation under ion irradiation in order to modify surfaces in namscale

离子辐照下的高温 SIM 观察，以纳米尺度修饰表面

• 批准号: 11450019
• 负责人: ODOMARI Iwao
• 金额: $ 9.22万
• 依托单位: Waseda University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450019/
• 关键词: Silicon; Ion irradiation; Surface modification; Seaming timeling-microscope; Senjcondictor surface; Defect; アルゴンイオン; ナノ改質

1. A high-tenperature low-energy ion-gun/scanning-tunneling-microscope (STM) conbined system has been developed in order to clarify the microscopic aspects of annealing processes of ion-irradiated Si surfaces. This system enables us to perform atom-resolved high tenperature STM observation and ion beam irradiation simultaneously in ultrahigh vacuum conditions. Taking great advantage of this system, we have successfully obtained sequential STM images of high-temperature Si (111) surfaces irradiated with Ar' single ions. The STM results have shown that the surface defects induced by single ion irradiation show various changes in size and shape, which is considered to result from diffusion of vacancies and interstitial atoms in the substrates, diffusion of atoms on the surface, and from an anisotropic character of the surface atonic arrangement. And we succeed in real-time STM observation under 0^+ ion irradiation. Next target is dopant ion irradiation process.2. We have to simulate collision cascade inbulk and following annealing, because STM tipobserves surface information only. First principle calculation, molecular dynamics, Monte-Carlo simulation is applied to investigate the phenomenon we observed.

1。已经开发了一个高质量的低能离子枪/扫描 - 隧道 - 微镜（STM）结合系统，以阐明离子放射的SI表面退火过程的显微镜方面。该系统使我们能够在超高真空条件下同时执行原子化的高tenperature STM观测和离子束照射。利用该系统的优势，我们成功地获得了用AR'单离子照射的高温Si（111）表面的顺序STM图像。 STM结果表明，单个离子辐照引起的表面缺陷显示出大小和形状的各种变化，这被认为是由于底物中空位和间质原子扩散而导致的，表​​面原子的扩散，以及各向异性特征表面无态排列。我们在0^+离子辐照下实时观察成功。下一个目标是掺杂离子辐照过程。2。我们必须模拟碰撞级联向Inbulk和退火后，因为STM Tipobserv仅表面信息。第一个原理计算，分子动力学，蒙特 - 卡洛模拟用于研究我们观察到的现象。

项目成果

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Tanii T、Goto T、Iida、T、Koh-Masahara M、Ohdomari I：“利用生物发光酶荧光素酶制备腺苷三磷酸分子识别芯片”JJAP。第 40 卷，第 10B 期。 ）

S.Sawara: "Simple fabrication of high density concave nanopyramid array (NPA) on Si surface"Applied Surface Science. 159-160. 481-485 (2000)

S.Sawara：“在硅表面上简单制造高密度凹面纳米金字塔阵列（NPA）”应用表面科学。

K.Shimada: "Effect of environmental O_2 on dynamical process of the Si(111)"1×1"→7x7 structural phase transition"Surface Science. 433-435. 460-464 (1999)

K.Shimada：“环境O_2对Si(111)“1×1”→7x7结构相变动力学过程的影响”表面科学433-435（1999）。

T.Ishimaru: "Size changes of n×n stacking-fault half units of dimer-adatom-stacking-fault structures on quenched Si(111) surfaces"Physical Review B. 60. 13592-13597 (1999)

T. Ishimaru：“淬火 Si(111) 表面上二聚体-吸附原子-堆垛层错结构的 n×n 堆垛层错半单位的尺寸变化”物理评论 B. 60. 13592-13597 (1999)

T.Watanabe: "The Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface"H.Z.Massoud, I.J.R.Baumvol, M.Hirose and E.H.Poindexter. 12 (2000)

T.Watanabe：“SiO_2 和 Si-SiO_2 界面的物理和化学”H.Z.Massoud、I.J.R.Baumvol、M.Hirose 和 E.H.Poindexter。