Novel semiconductors with controlled both single-atom number and position

单原子数量和位置受控的新型半导体

基本信息

批准号：
17201026
负责人：
ODOMARI Iwao
金额：
$ 32.61万
依托单位：
Waseda University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2007
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17201026/
关键词：
Single ion implantation Semiconductor Silicon Impurity atom Radom dopant fluctuation Ordered dopant array Impurity doping Transistor シングルイオン注入法ナノデバイス点欠陥半導体デバイス MOSFET 閾値電圧

项目摘要

Doping of impurity atoms into semiconductors is essential to achieving the proper function of semiconductor devices. So far the semiconductor has been assumed to be homogeneously doped in the active channel region. In the nano-scale semiconductor devices, however, the channel region will contain few dopant atoms and the assumption of uniform dopant distribution is no longer feasible. In this situation, the statistical fluctuation in dopant atom number due to random Poisson distribution will elicit deleterious effects on the device's functioning. We have been developing a single-ion implantation(SII) method that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached In this study, we have improved the beam diameter approximately 10nm by modifying the focused ion beam optics for the SII and achieved the single-ion detection efficiency 100% by detecting the change in drain-current induced by single-ion incidence. We have then fabricated semico … More nductor devices with ordered dopant arrays by the SII. Electrical measurements of the resulting transistors revealed that there are fewer device-to-device fluctuations in the threshold voltage (V_<th> ; the turn-on voltage of the device) of the devices with ordered dopant arrays than of those with conventional randomly doped distribution. We also found that the average value of V_<th> for the devices with ordered dopants is two times lower than that of the devices with a random distribution of dopants. We explain this pronounced difference in threshold voltage as follows : the uniformity of electrostatic potential lowers the voltage required to open the channel from source to drain, which allows for early turn-on in those parts of the channel that correspond to the positioning of the implanted ions and results in the lower threshold voltage. It must be noted that current technology, which is based on random distribution of ions, cannot control either the number or the positioning of the ions, while our method can control both the number and the positioning of the ions and that this control is essential for future nanoscale semiconductor devices. Less

将杂质原子掺杂到半导体的适当功能中，总和是在激活通道调节中均匀的掺杂。分布不再可行。在这项研究中，我们通过通过单离子发射率通过有序的掺杂剂阵列来修改SII的焦距和ACHIEDLE-ION检测效率，从而提高了BEA直径约10nm。 SII。所得晶体管的电测量结果表明，在设备的阈值电压（设备的转机电压）中，有排序的阵列与常规掺杂分布的设备相比具有有序掺杂剂的设备的平均值，如下：静电电势的均匀性降低了从源开放通道所需的电压。对于较低的TheShold Tage的位置