Study on suppression of fluctuation in semiconductor electrical characteristics by single ion inplantaticn

单离子植入抑制半导体电特性波动的研究

• 批准号: 12555092
• 负责人: ODOMARI Iwao
• 金额: $ 8.64万
• 依托单位: Waseda University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12555092/
• 关键词: Single ion inplantation; Semicondjctor; Nano devices; Carfacn nano tube; Focused ion bean; Liquid metal ion source; Impurity control; Catalysis control; 不純物位置制御; 触媒位置制御; 集束イオンビーム; 不純物ゆらぎ; 同時ドーピング; ELTRAN; ドーパント原子配列; 極微半導体; ナノテクノロジー; ドーパント

In order to develop potentialities of single ion implantation through die precise control of solid-state physical and chemical properties in nano-scale semiconductors by one-by-one implantation of dopant atoms, we demonstrated the control of the electrical characteristics in ultrafine semiconductor devices and the selective growth of carbon nanotubes/fibers at catalytic ion-implanted site as follows.Control of electrical properties in ultrafine semiconductor devicesThe influence of dopant atom position on V_<th> in silicon wire MOSFETs was experimentally investigated for the first time by means of SIX. P single-ions were implanted into n-type channel region at intervals of 100nm. V_<th> was evaluated and compared with that of conventional FETs in which the dopant atoms were randomly introduced. Our results indicate that V_<th> fluctuation of FETs with ordered dopant distribution was smaller than that of FETs with random channel doping. It was also found that the average value of V_<th> … More of FETs with the ordered dopants was much lower than that of FETs with the random distribution of dopants, even though the dopant number was exactly same for both FETs. This indicates that it is important to control the dopant position for the precise control of V_<th>.Position control of carbon nanotubes/fibersThe precise control of individual CNFs position on substrate is essential for opening up novel device applications. We attempted to control the growth position of CNFs by means of focused Ni ion implantation and the subsequent plasma chemical vapor deposition (CVD). Ni ions were implanted at 30kV into n-type Si(100) substrate through the thermally grown oxide film. After a removal of thermal oxide, an antenna edge 2450MHz microwave plasma assistant CVD was carried out at 600℃ for 10 min with pure hydrogen and methane over 99.9999% for the CNF growth. The selective growth of CNFs on Ni-implanted sites was observed. It was confirmed for the first time that the implanted Ni ions act as a catalyst for the synthesis of CNFs. Less

为了通过逐一注入掺杂剂原子来精确控制纳米级半导体中的固态物理和化学性质，开发单离子注入的潜力，我们演示了超精细半导体器件中电特性的控制和碳纳米管/纤维在催化离子注入位点的选择性生长如下。超细半导体器件中电性能的控制硅线中掺杂剂原子位置对 V_<th> 的影响首次对MOSFET进行了实验研究，通过将6个P单离子以100nm的间隔注入到n型沟道区中，并与随机掺杂原子的传统FET进行了评估。我们的结果表明，具有有序掺杂剂分布的 FET 的 V_<th> 波动小于具有随机沟道掺杂的 FET 的 V_<th> 波动。具有有序掺杂剂的 FET 的掺杂剂数量远低于具有随机分布掺杂剂的 FET，即使这两个 FET 的掺杂剂数量完全相同，这表明控制掺杂剂位置对于精确控制 V_< 非常重要。 th>.碳纳米管/纤维的位置控制基板上单个CNF位置的精确控制对于开辟新颖的设备应用至关重要。我们尝试通过聚焦Ni来控制CNF的生长位置。离子注入和随后的等离子体化学气相沉积（CVD）在30kV下通过热生长的氧化膜将Ni离子注入到n型Si（100）衬底中，去除热氧化物后，在天线边缘2450MHz微波等离子体辅助CVD。使用纯度超过 99.9999% 的纯氢气和甲烷在 600℃ 下进行 10 分钟，以实现 CNF 的选择性生长。首次观察到注入的Ni离子可以作为CNF合成的催化剂。

项目成果

Koh M, Goto T, Sugita A, Tanii T, Iida, T, Shinada T, Matsukawa T, Ohdomari I: "Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching"JJAP. 40巻4B号. 2837-2839 (2001)

Koh M、Goto T、Sugita A、Tanii T、Iida、T、Shinada T、Matsukawa T、Ohdomari I：“通过掺杂离子注入和湿法蚀刻制造高密度掩埋纳米金字塔阵列的新工艺”JJAP 40 卷。第 4B 号。2837-2839 (2001)

Watanabe T, Tatsumura K, Kajimoto A, Inaba Y, Ogura K, Ohdomari I: "Initial Oxidation Process of Si(001) Simulated by Using a Parallel PC System"SEMICONDUCTORTECHNOLOGY 1. 242-246 (2001)

Watanabe T、Tatsumura K、Kajimoto A、Inaba Y、Ogura K、Ohdomari I：“使用并行 PC 系统模拟 Si(001) 的初始氧化过程”SEMICONDUCTORTECHNOLOGY 1. 242-246 (2001)

Shimada K, Ishimaru T, Yamawaki T, Uchigasaki M, Tomiki K, Matsukawa T, Ohdomari I: "High-temperature real-time observation of surface defects induced by single ion irradiation using scanning-tunneling-microscope/ion-gun combined system"JVST B. 19巻5号. 198

Shimada K、Ishimaru T、Yamawaki T、Uchigasaki M、Tomiki K、Matsukawa T、Ohdomari I：“使用扫描隧道显微镜/离子枪组合系统对单离子辐照引起的表面缺陷进行高温实时观察” JVST B. 第 19 卷第 5 期. 198

T.Shinada: "Improvement of Focused Ion-Beam Optics in Single-Ion Implantation for Higher Aiming Precision of One-by-One Doping of Impurity Atoms into Nano-Scale Semiconductor Devices"Jpn.J.Appl.Phys.Part 2. 41・3A. L287-L290 (2002)

T. Shinada：“改进单离子注入中的聚焦离子束光学器件，以提高纳米级半导体器件中杂质原子逐一掺杂的瞄准精度”Jpn.J.Appl.Phys.Part 2. 41・3A。L287-L290（2002）

T. Tanii, T. Goto, T. lida, M. Koh-Masahara and L Ohdomari: "Sinp|le fabrication of silicon nanopyramids for high performance field emitter array"Ext. Abst. SSDM. 578-579 (2001)

T. Tanii、T. Goto、T. lita、M. Koh-Masahara 和 L Ohdomari：“用于高性能场发射体阵列的硅纳米金字塔的简单制造”Ext。