Studies on optical nondestructive detection methods of small crystal defects in the next generation of silicon wafers

下一代硅片微小晶体缺陷光学无损检测方法研究

基本信息

批准号：
10450008
负责人：
YAMADA Masayoshi
金额：
$ 3.78万
依托单位：
Kyoto Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 2001
项目状态：
已结题

项目摘要

This research has been done to develop optical nondestructive methods with high-sensitivity for detecting small crystal defects in the next generation of silicon substrates, which is one of the most important issues to be solved for electronics industries, and the following research results have been obtained ;(1) In order to observe residual strains and crystal defects in SOI which is a promising substrate for the next generation of high-speed LSI, a reflection type of infrared polariscope has been developed to detect a small amount of birefringence induced by strains and defects when the probing light is propagating through the silicon layer and also reflecting back from the interface between silicon layer and insulator. By using this instrument developed here, we found that the residual strains and defects caused by lattice mismatching in SOS, which was one of SOI, were reduced by laser annealing. In this way, we demonstrated the usefulness of the reflection type of polariscope deve … More loped here.(2) A high-sensitivity scanning system for detecting infrared birefringence in silicon wafers has been developed by improving the scanning infrared polariscope which was developed for the qualitaive characterization of residual strains in compound semiconductors. By using this system, we observed defect-induced birefringence due to slip lines, OSF, and etc., (b) process-induced birefringence caused near the holding region during thermal treatment, (c) a small amount of birefringence induced by the weight of silicon wafer itself. In this way, we demonstrated the usefulness of the high-sensitivity scanning system for detecting infrared birefringence in silicon wafers.(3) We have tried to measure birefringence in dislocation-free silicon ingot by improving the high-sensitivity birefringence detecting system. We found that there is a small amount of optical anisotropy induced by an interaction between light wave and local electric field in silicon although it was considered to be optically isotropic by a classical optic theory. This optical anisotropy was observed when the light wave was propagating along the crystallo graphic <110> direction. Furthermore, we found a extremely small amount of birefringence relating probably to spatial distribution of point defects when we introduced the light wave along the <100> direction that the optical anisotropy was not active. This is indicative of a possibility that we may characterize the distribution of point defects, which is recognized up to now to be very difficult. Less

已经进行了这项研究来开发具有高敏感性的光学无损方法，以检测下一代硅底物中的小晶体缺陷，这是对电子行业要解决的最重要的问题之一，并且已经获得了以下研究结果，并且已经获得了以下研究结果；（1）为了在接下来的远程缺陷中估计一定的远程缺陷，这是一个远程远程缺陷，而远程远程远程远程启用了较差的rediperi，则可以依次进行远程缺陷。红外线层的类型已开发出来，以检测当探测灯通过硅层传播时，由菌株和缺陷引起的少量双折射，并从硅层和绝缘子之间的界面反射回来。通过使用此处开发的该仪器，我们发现通过激光退火减少了SOI中的晶格不匹配而导致的残留菌株和缺陷。通过这种方式，我们证明了Polariscope Deve的反射类型的有用性……（2）通过改进用于改进用于固定的scanning Infrared PolarsiScope来检测硅波中的红外双发性偏双发性扫描系统的高敏性扫描系统，该系统是为了改善用于质量的降级性层状式极性特征，以使其具有质量性分离性的半强度。通过使用该系统，我们观察到由于滑动线，OSF等引起的缺陷引起的双折射，（b）过程诱导的在热处理期间在保持区域附近引起的双重双折射，（c）由硅波本身的重量引起的少量双折射。通过这种方式，我们证明了高敏性扫描系统在硅波中检测红外双发性的有用性。（3）我们试图通过改善高敏感性比尔弗林格检测系统来测量无位错硅铸币厂中的双重双重。我们发现，尽管经典的光学理论被认为是光学上的各向同性，但通过光波与局部之间的相互作用引起了少量的光学各向异性。当光波沿着Crystallo图形<110>方向传播时，观察到了这种光学各向异性。此外，当我们沿着<100>方向引入光波时，光波不活跃时，我们发现了很少的双折射可能与点缺陷的空间分布有关。这表明我们有可能表征点缺陷的分布，到目前为止，这非常困难。较少的