Study on Laser-Crystallization Process of Semiconductors

半导体激光晶化工艺研究

基本信息

批准号：
01550015
负责人：
YAMADA Masayoshi
金额：
$ 1.22万
依托单位：
Kyoto Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1990
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01550015/
关键词：
Laser crtstallization Laser annealing Silicon Analysis of heat SOI Melting 溶融三次元集積回路

项目摘要

1. By using a recursive manner and Green's function solutions derived in a semi-infinite multilayer structure, a nonlinear heat equation including temperature-dependent thermal conductivity and diffusivity and fusion energy for melting has been able to be solved numerically.2. A two-dimensional boundary element method has been developed to solve in a complex composite material. In order to improve the numerical calculation accuracy at a corner, several methods were tried. A newly-developed mid-node method is found to give a good accuracy and an easiness in programming and dividing into elements.3. Thin silicon film during its melting by irradiation of a focused cw argon ion laser beam has been directly observed by using an optical microscope. As the power of laser beam is increased, a mixture region where the solid and liquid coexist appears and then a uniform molten pool is formed in the middle of the mixture region. It is demonstrated that this situation is strongly influenced by the mode and power of laser beam that is, the laser intensity profile. TEM00 mode is suitable to recrystallize SOI of good crystalline quality.4. A high-speed laser direct-drawing system has been constructed by using a galvanometer. This system was able to generate a pseudo-line beam. A trapezoid waveform is found to be good in generating the pseudo-line beam.

1。使用递归方式和Green的函数解决方案得出的半限制多层结构，一种非线性热方程，包括温度依赖性的热导率，熔化的扩散率和融合能量的熔融能量，可以数值求解。2。已经开发了一种二维边界元素方法来解决复杂的复合材料。为了提高角落的数值计算精度，尝试了几种方法。发现了一种新开发的中点方法，可以在编程和分为元素方面具有良好的准确性和易于度。3。通过使用光学显微镜，直接观察到了通过聚焦CW氩离子激光束的辐射在熔化过程中的薄硅膜。随着激光束的功率增加，出现固体和液体共存的混合区域，然后在混合物区域的中间形成均匀的熔融池。已经证明，这种情况受激光束的模式和功率强烈影响，即激光强度曲线。 TEM00模式适用于重结晶质量良好的SOI。4。通过使用仪表仪构建了高速激光直接抽签系统。该系统能够生成伪线光束。发现梯形波形在产生伪线光束方面非常好。