Study on Laser-Crystallization Process of Semiconductors

半导体激光晶化工艺研究

• 批准号: 01550015
• 负责人: YAMADA Masayoshi
• 金额: $ 1.22万
• 依托单位: Kyoto Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1990
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01550015/
• 关键词: Laser crtstallization; Laser annealing; Silicon; Analysis of heat; SOI; Melting; 溶融; 三次元集積回路

1. By using a recursive manner and Green's function solutions derived in a semi-infinite multilayer structure, a nonlinear heat equation including temperature-dependent thermal conductivity and diffusivity and fusion energy for melting has been able to be solved numerically.2. A two-dimensional boundary element method has been developed to solve in a complex composite material. In order to improve the numerical calculation accuracy at a corner, several methods were tried. A newly-developed mid-node method is found to give a good accuracy and an easiness in programming and dividing into elements.3. Thin silicon film during its melting by irradiation of a focused cw argon ion laser beam has been directly observed by using an optical microscope. As the power of laser beam is increased, a mixture region where the solid and liquid coexist appears and then a uniform molten pool is formed in the middle of the mixture region. It is demonstrated that this situation is strongly influenced by the mode and power of laser beam that is, the laser intensity profile. TEM00 mode is suitable to recrystallize SOI of good crystalline quality.4. A high-speed laser direct-drawing system has been constructed by using a galvanometer. This system was able to generate a pseudo-line beam. A trapezoid waveform is found to be good in generating the pseudo-line beam.

1. 通过使用递归方式和在半无限多层结构中导出的格林函数解，能够数值求解包括与温度相关的热导率和扩散率以及熔化的聚变能的非线性热方程。 2．二维边界元方法已被开发用于求解复杂的复合材料。为了提高拐角处的数值计算精度，尝试了多种方法。新开发的中节点方法具有良好的精度，并且易于编程和划分元素。 3．使用光学显微镜直接观察了聚焦连续氩离子激光束照射下的硅薄膜熔化过程。随着激光束功率的增大，出现固液共存的混合区域，并在混合区域的中部形成均匀的熔池。事实证明，这种情况受到激光束的模式和功率（即激光强度分布）的强烈影响。 TEM00模式适合重结晶SOI，结晶质量良好。4．利用振镜构建了高速激光直画系统。该系统能够生成伪线光束。发现梯形波形有利于生成伪线光束。

项目成果

山田 正良: "レ-ザ溶融・再結晶化の空間的不均一性" 第37回応用物理学関係連合講演会講演予稿集. 29P-ZF5/II (1990)

Masayoshi Yamada：“激光熔化和再结晶中的空间异质性”第 37 届应用物理学联合会议论文集 29P-ZF5/II (1990)。

Mesayoshi Yamada: "In Situ Observation of CW-Laser Melting of Thin Silicon Films" Japanese Journal of Applied Physics. (1991)

Mesayoshi Yamada：“连续激光熔化硅薄膜的原位观察”日本应用物理学杂志。

Masayoshi Yamada: "Spacial Instabilities of Laser Melting and Recrystallization" The 37th meeting of applied physics and related field. 29P-ZF5/II. (1990)

Masayoshi Yamada：“激光熔化和再结晶的空间不稳定性”应用物理及相关领域第37次会议。

Masayoshi Yamada: "Temperature Distributions Produced in Multilayer Structures by a Scanning CW Laser Beam" Japanese Journal of Applied Physics. (1991)

Masayoshi Yamada：“扫描连续激光束在多层结构中产生的温度分布”日本应用物理学杂志。

山田正良: "レ-ザ溶融・再結晶化の空間的不均一性" 第37回応用物理学関係連合講演会講演予稿集. 29P-ZF5/II (1990)

Masayoshi Yamada：“激光熔化和再结晶的空间异质性”第 37 届应用物理学会会议记录 29P-ZF5/II (1990)。