Nondestructive characterization of residual strain in large-diameter semiconductor crystal ingot using three-dimensional infrared photoelastic CT method

三维红外光弹CT法无损表征大直径半导体晶锭残余应变

基本信息

批准号：
13555004
负责人：
YAMADA Masayoshi
金额：
$ 8.32万
依托单位：
KYOTO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555004/
关键词：
semiconductor infrared photoelasticity non-destroying characterization residual strain

项目摘要

The purpose of this work is to develop a new technique by which there e-dimensional distribution of residual strain in large-diameter semiconductor crystal ingots such as silicon and GaAs can be characterized nondestructively as standard ingot form and then for it to be intended for practical use. To do so, we have developed a three-dimensional infrared photoelastic CT equipment, in which a linearly-polarized light beam is introduced both along to the z-axis into a cylindrical semiconductor crystal ingot and the polarization of the transmitted light beam is analyzed, and then pratically characterized the residual strain in LEC-grown GaAs single crystal ingots, FZ-grown dislocation-free Si single crystal ingots, and CZ-grown Si single crystal ingots.It was difficult for us to make the infrared photoelastic measurement in as-grown LEC-GaAs ingots, because there were many concave or convex ditches on their cylindrical surface. However, we have designed a new technique by which we can make … More the photoelastic measurement in cylindrically-grinded ingots under the condition of rough surfaces, not polished mirror surfaces. With this new technique, we become able to characterize pseudo-three-dimensional distribution of residual strain in LEC-GaAs single crystal ingots. On the other hand, it was possible for us to make the infrared photoelstic measurement in dislocation-free FZ-Si single crystal ingots. It was found that the birefringence induced due to optical anisotropy was dominated over that photoelastically induced by residual strain, since the residual strain was extremely small in the FZ-Si ingots. Although the optical anisotropy was also dominated in CZ-grown Si ingots, we have demonstrated that the residual-strain-induced birefringence can be measu.Red by introducing the probing infrared light beam along the [100] crystallographic directions. According to our work, the infrared photoelastic technique developed here is very useful in investigating dislocations in large-diameter Si single crystals. Less

这项工作的目的是开发一种新技术，通过该技术可以将大直径半导体晶锭（例如硅和砷化镓）中残余应变的 e 维分布无损地表征为标准晶锭形式，然后将其用于实际应用。为此，我们开发了一种三维红外光弹 CT 设备，其中将线性偏振光束沿 z 轴引入圆柱形半导体晶锭，并将偏振光束引入圆柱形半导体晶锭中。对透射光束进行了分析，然后对LEC生长的GaAs单晶锭、FZ生长的无位错Si单晶锭和CZ生长的Si单晶锭的残余应变进行了实际表征。生长的LEC-GaAs锭的红外光弹性测量，因为其圆柱表面上有许多凹或凸的沟道，但是，我们设计了一种新技术，可以通过它来测量。在粗糙表面而不是抛光镜面的条件下对圆柱形研磨锭进行光弹性测量，利用这项新技术，我们能够表征 LEC-GaAs 单晶锭中残余应变的伪三维分布。另一方面，我们可以对无位错的FZ-Si单晶锭进行红外光电测量，发现由于光学各向异性而引起的双折射。由于 FZ-Si 晶锭中的残余应变极小，因此光学各向异性在 CZ 生长的 Si 晶锭中占主导地位，但我们已经证明残余应变引起的双折射可以被控制。通过沿着[100]晶体方向引入探测红外光束来测量红色根据我们的工作，这里开发的红外光弹性技术对于研究位错非常有用。大直径硅单晶较少。