Study on Laser Crystallization Process in Semiconductor

半导体激光晶化工艺研究

基本信息

批准号：
61550016
负责人：
YAMADA Masayoshi
金额：
$ 1.34万
依托单位：
Kyoto Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1986
资助国家：
日本
起止时间：
1986 至 1987
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-61550016/
关键词：
Laser crystallization Heat Analysis Three dimensional integrated circuits Laser annealing Semiconductor 温度

项目摘要

1) A numerical calculation algorism has been developped to solve the nonlinear heat equation including the temperature dependences of optical constant, themal conductivity and diffusivity, based on the linear solution of heat equation in a semi-infinite multilayer structure.2) An effective temperature, denoting the absorption rate of latent heat, has been intriduced to include the latent heat on phase transition between solid and liquid to the nonlinear numerical calculation algorism. If the effective temperature is between 1412゜C and 2857゜C, it means a partial melting. If it is above 2857゜C, then it means a melting.3) The numerical calculation results have been compared with the experimental results on melting width in Si/SiO_2/Si. It is found that the melting occurs effectively at the effective temperature of 2100゜C corresponding to the absorption of half a latent heat.4) By using a microscopic infrared camera, the radiation images have been observed to distinguish the boundaries between solid and liquid and recorded by VTR.5) A digital image input/output instrument has been made to process the images recorded by the VTR. It is found that there are mixtures of solid and liquid and that the part of solid is the nucleation center of crystallization.6) It is found that the mixtures of solid and liquid are strongly influenced by the intensity distribution of irradiating laser; that is, the temperature distribution. At the present moment, it is not clear what dominates over the physical mechanism on mixtures of solid and liquid. On this problem further investigation is needed.

1) 基于半无限多层结构中热方程的线性解，开发了一种数值计算算法来求解非线性热方程，包括光学常数、热导率和扩散率的温度依赖性。2) 有效温度，表示潜热的吸收率，如果有效温度在之间，则将固体和液体之间的相变潜热纳入非线性数值计算算法中。 1412℃和2857℃为部分熔化,2857℃以上为熔化。3)将数值计算结果与Si/SiO_2/Si熔化宽度的实验结果进行了比较。结果发现，熔化在有效温度2100℃下有效发生，相当于吸收了一半潜热。4）通过使用显微镜5）制作了数字图像输入/输出仪器来处理VTR记录的图像，发现存在混合物。 6)发现固体和液体的混合物受此时激光的强度分布即温度分布的影响。，它目前尚不清楚是什么主导了固体和液体混合物的物理机制，需要进一步研究。