The Effect of Bias Voltage Application to Metals to Promote Their Nitriding and Carburizing in High-Density Inductively Coupled Plasma

高密度电感耦合等离子体中对金属施加偏压促进渗氮和渗碳的效果

基本信息

批准号：
06650814
负责人：
AKASHI Kazuo
金额：
$ 1.28万
依托单位：
Science University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06650814/
关键词：
High Density Plasma Inductive Coupling Nitriding Carburizing Bias Voltage Iron Titanium Iron Nitride プラズマチタン鉄

项目摘要

Pure iron sample (the thickness : 1mm) was treated at 550ﾟC and for 120min under N_2-H_2 (90 : 10) inductively coupled plasma (frequency : 4 MHz, pressure : 240 mtorr). Without the application of bias voltage to the sample, denitrification layr (the thickness : -20mum) appeared towards the inner part of the sample from its surface. It can be estimated that hydrogen radical accelerates such denitrification. With the application of negative bias of 200V to the sample. the growth of iron nitride layr (the thickness : -25mum) and 200mum iron diffusion layr was observed. This fact means that the effect of negative bias supply to the sample exceeds that by hydrogen radical. In nitriding of SUS 304 sample, the increase of surface hardness was remarkable under the application of negative bais to the sample, comparing with the case of iron nitriding.In nitriding and carbo-nitriding of Ti, the remarkable increase of nitrogen or carbon diffusion layr and nitride or carbonitride layr were confirmed last year. This year, a very high density r. f. (13.56MHz) plasma which has about 8 x 10^<13>/cm^3 in electron density, was used for nitriding of Ti. Ti sample (the thickess : 0.8mm) was treated in the plasma generated under the next experimental conditions, total pressure : 8-60mtorr, gas flow rate : N_2, 0-7 sccm, H_2, 18-70sc cm, power input : 70W and 350W, time : 120min, substrate temperature : 300-600ﾟC.The nitriding of Ti and the formation of Ti nitride were confirmed by using a plasma with negative bias application to Ti sample. It is a very interesting phenomena, because it means that the nitriding can be only promoted by nitrogen ion in presence of plenty of radicals taking part in nitriding process.

纯铁样品（厚度：1mm）在550°C下处理，在N_2-H_2（90:10）下为120分钟的电感耦合等离子体处理（频率：4 MHz，压力：240 MTORR）。如果没有偏置电压在样品中施加，则来自其表面的硝化电压（厚度：-20mum）出现在样品的内部。可以估计，氢根部加速这种硝化化。随着200V的负偏置在样品中。观察到了氮化铁Layr（厚度：-25MUM）和200mum铁扩散层的生长。这一事实意味着，负偏压供应对样品的影响超过了氢自由基的影响。在SUS 304样品的硝化中，与硝化铁的情况相比，在硝酸铁和Ti的碳 - 硝化情况下，表面硬度的增加显着，氮或碳扩散Layr和氮化物或氮化物或碳酸酯或碳酸酯的Layr在上一年被确认。今年，密度很高r。 f。（13.56MHz）等离子体的电子密度约为8 x 10^<13>/cm^3，用于硝化Ti。 Ti sample (the thickness : 0.8mm) was treated in the plasma generated under the next experimental conditions, total pressure : 8-60mtorr, gas flow rate : N_2, 0-7 sccm, H_2, 18-70sc cm, power input: 70W and 350W, time: 120min, substrate temperature: 300-600ﾟC.The nitriding of Ti and the formation of Ti nitride通过使用对Ti样品施用负偏置的等离子体来确认。这是一个非常有趣的现象，因为这意味着在存在大量自由基参与硝化过程的情况下，氮才能通过氮离子促进。