The Effect of Bias Voltage Application to Metals to Promote Their Nitriding and Carburizing in High-Density Inductively Coupled Plasma

高密度电感耦合等离子体中对金属施加偏压促进渗氮和渗碳的效果

基本信息

批准号：
06650814
负责人：
AKASHI Kazuo
金额：
$ 1.28万
依托单位：
Science University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06650814/
关键词：
High Density Plasma Inductive Coupling Nitriding Carburizing Bias Voltage Iron Titanium Iron Nitride プラズマチタン鉄

项目摘要

Pure iron sample (the thickness : 1mm) was treated at 550ﾟC and for 120min under N_2-H_2 (90 : 10) inductively coupled plasma (frequency : 4 MHz, pressure : 240 mtorr). Without the application of bias voltage to the sample, denitrification layr (the thickness : -20mum) appeared towards the inner part of the sample from its surface. It can be estimated that hydrogen radical accelerates such denitrification. With the application of negative bias of 200V to the sample. the growth of iron nitride layr (the thickness : -25mum) and 200mum iron diffusion layr was observed. This fact means that the effect of negative bias supply to the sample exceeds that by hydrogen radical. In nitriding of SUS 304 sample, the increase of surface hardness was remarkable under the application of negative bais to the sample, comparing with the case of iron nitriding.In nitriding and carbo-nitriding of Ti, the remarkable increase of nitrogen or carbon diffusion layr and nitride or carbonitride layr were confirmed last year. This year, a very high density r. f. (13.56MHz) plasma which has about 8 x 10^<13>/cm^3 in electron density, was used for nitriding of Ti. Ti sample (the thickess : 0.8mm) was treated in the plasma generated under the next experimental conditions, total pressure : 8-60mtorr, gas flow rate : N_2, 0-7 sccm, H_2, 18-70sc cm, power input : 70W and 350W, time : 120min, substrate temperature : 300-600ﾟC.The nitriding of Ti and the formation of Ti nitride were confirmed by using a plasma with negative bias application to Ti sample. It is a very interesting phenomena, because it means that the nitriding can be only promoted by nitrogen ion in presence of plenty of radicals taking part in nitriding process.

纯铁样品（厚度：1mm）在N_2-H_2（90：10）感应耦合等离子体（频率：4 MHz，压力：240 mtorr）下在550℃下处理120分钟，且不施加偏压。样品中，反硝化层（厚度：-20mum）从其表面向样品内部出现，可以估计氢自由基加速了这种情况。当对样品施加200V的负偏压时，观察到氮化铁层（厚度：-25μm）和200μm的铁扩散层的生长，这意味着对样品施加负偏压的效果超过了该效果。在SUS 304样品的氮化中，与铁的情况相比，在对样品施加负基的情况下，表面硬度显着增加。在Ti的氮化和碳氮化中，去年证实了氮或碳扩散层和氮化物或碳氮化物层的显着增加，其密度约为8 x 10 ^ 。 <13>/cm^3的电子密度，用于在Ti样品(厚度：0.8mm)的氮化处理下产生的等离子体。接下来的实验条件，总压：8-60mtorr，气体流量：N_2，0-7 sccm，H_2，18-70sc cm，功率输入：70W和350W，时间：120min，基板温度：300-600℃。通过对 Ti 样品施加负偏压等离子体，证实了 Ti 的氮化和 Ti 氮化物的形成，这是一个非常有趣的现象。因为这意味着只有在有大量自由基参与氮化过程的情况下，氮离子才能促进氮化。