Rapid Growth of Diamond Film by Combustion Plasma Coupled Inductively with Radio Frequency Power

燃烧等离子体与射频功率感应耦合快速生长金刚石薄膜

• 批准号: 04555159
• 负责人: AKASHI Kazuo
• 金额: $ 2.05万
• 依托单位: Science University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-04555159/
• 关键词: Diamond; Combustion Flame; Plasma; R.F.Induction; Nucleation Density; Deposition; Acetylene; 燃焼; 高周波; ラマン分光; 非晶質炭素; 堆積速度; 膜成長

It has been reported that diamond film can be deposited in the atmospheric ambient by a simple CVD technique using a combustion flame using acetyleneoxygen as starting materials. In our experiment, RF electric power was coupled with the combustion flame inductively to excite the flame as a plasma.Mo, Cu, or Ti substrate was placed on a water-cooled copper stage under the combustion flame which was excited with RF popwer supplied through a copper workcoil. Only diamond particles was deposited on the polished mirror surface of Mo or Cu substrate, but the nucleation density and the growth rate were accelerated with RE power impression. High quality diamond film was rapidly formed on Mo substrate scratched with fine diamond particles at 400。C (at the rear side of the substrate) with 300W RF power (13.56MHz). High quality diamond film was also formed on Cu substrate at almost same condition, but at lower substrate temperatures. The quality of diamond film was deteriorated with higher frequency (27.12 MHz) or higher power impression. The growth rates of diamond particles and diamond film were accelerated by using Ti substrate carbonitrided in RF nitrogen-acetylene plasma. Accordinly, a combination of such pretreatment and RF impression to combustion flame plasma must be very effective for rapid growth of diamond on some kinds of substrates.

据报道，可以使用乙炔氧作为起始材料，通过简单的CVD技术在大气环境中沉积金刚石薄膜。在我们的实验中，射频电力与燃烧火焰感应耦合以将火焰激发为等离子体。将钼、铜或钛基材放置在燃烧火焰下的水冷铜台上，燃烧火焰由通过铜工作线圈提供的射频功率激发，只有金刚石颗粒沉积在钼或铜基材的抛光镜面表面上。在400℃的细金刚石颗粒划痕的Mo基底上，RE功率的作用加速了成核密度和生长速率。在几乎相同的条件下，300W射频功率（13.56MHz）的C（在衬底的背面）也可以在Cu衬底上形成高质量的金刚石膜，但是在较低的衬底温度下，随着频率的升高，金刚石膜的质量变差。 (27.12 MHz)或更高的功率印象通过使用在RF氮-乙炔等​​离子体中碳氮共渗的Ti基底加速了金刚石颗粒和金刚石薄膜的生长速率。等离子火焰对燃烧的影响对于金刚石在某些类型的基底上的快速生长一定非常有效。

项目成果

穂積 篤,明石 和夫: "高周波励起燃焼炎を利用するダイヤモンド膜の合成" 電気化学および工業物理化学. 60. 657-658 (1992)

Atsushi Hozumi、Kazuo Akashi：“利用高频激发燃烧火焰合成金刚石薄膜”电化学和工业物理化学 60. 657-658 (1992)。

Takayasu SATO, Manabu NEGISHI, Kazuo AKASHI: "Diamond Synthesis on Plasma Carbonitrided Titanium Substrate" The Journal of Surface Finishing Society of Japan.

Takayasu SATO、Manabu Negishi、Kazuo AKASHI：“等离子碳氮共渗钛基材上的金刚石合成”日本表面精加工学会杂志。

M.Negishi,S.Narumi,T.sato,K.Akashi: "Some effects of r.f.power impression and pretreatment of substrate on diamond CVD using a combustion flame plamsa" ICRP-2/SPP-11,Japan Society of Applied Physics. 231-234 (1994)

M.Negishi、S.Narumi、T.sato、K.Akashi：“使用燃烧火焰等离子体对金刚石 CVD 进行射频功率印象和预处理的一些影响”ICRP-2/SPP-11，日本应用物理学会。

M.Negishi,S.Narumi,T.Sato,K.Akashi: "Some effects of r.f. power impression and pretreatment of substrate on diamond CVD using a combustion flame plasma" ICRP-2/SPP-11,Japan Society of Applied Physics. 231-234 (1994)

M.Negishi、S.Narumi、T.Sato、K.Akashi：“射频功率印象和基材预处理对使用燃烧火焰等离子体的金刚石 CVD 的一些影响”ICRP-2/SPP-11，日本应用物理学会。

Atsushi HOZUMI, Kazuo AKASHI: "The Synthesis of Diamond Film by Using an RF Coupled Combustion Flame Plasma" DENKI KAGAKU. 60. 657-658 (1992)

Atsushi HOZUMI、Kazuo AKASHI：“使用射频耦合燃烧火焰等离子体合成金刚石薄膜”DENKI KAGAKU。