Application of Chemical Transport Using Micro Wave Plasma to Deposition of Cubic Boron Nitride Film

微波等离子体化学输运在立方氮化硼薄膜沉积中的应用

基本信息

  • 批准号:
    03650544
  • 负责人:
  • 金额:
    $ 1.28万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
  • 财政年份:
    1991
  • 资助国家:
    日本
  • 起止时间:
    1991 至 1992
  • 项目状态:
    已结题

项目摘要

1. Preliminary experiments for chemical transport of boron have been carried out by using a conventional horizontal plasma reactor made of quartz glass. Boranes were generated by the reaction between solid boron particles and low pressure r.f. hydrogen plasma inductively generated. Boranes were transported on several silicon wafer substrates placed horizontally in the reactor and boron film was deposited on the substrates. When a small amount of nitrogen was mixed into the hydrogen plasma, boron nitride film was formed on each substrate. By the control of supplying plasma power, a boron film including sP^3 bonding was deposited on the substrate placed at a suitable distance from the center of plasma.2. A vertical plasma reactor made of quartz glass has been used to obtain better results for BN deposition. A BN tube was inserted into the quartz tube to prevent a chemical sputtering of its quartz wall by the low pressure inductive hydrogen plasma. By heating the substrate and applying a negative bias voltage to the substrate, pure hBN film was deposited. An auxiliary excitation of gas by a hot tungsten filament heated electrically was effective to obtain a high quality hBN film. It can be expected that experimental conditions to form BN film with cubic or wurtzite structure will be detected by controlling such auxiliary factors.3. A new vertical type of stainless steel plasma reactor was used as a trial for the chemical transport experiments. Highly excited plasma was generated by a high power microwave(MW) discharge. But it was very difficult to give a high power to plasma for a long time due to superheating of a part of the reactor. So it is necessary to improve a water cooling system of the reactor to deposit a high quality and thick BN film.
1。通过使用由石英玻璃制成的常规水平等离子体反应器进行的硼化学转运的初步实验。硼烷是由固体硼颗粒与低压R.F.产生的。氢等离子体感应产生。将硼烷在水平放置在反应堆中的几个硅晶圆底物上运输,并将硼膜沉积在底物上。当将少量的氮混合到氢血浆中时,在每个底物上形成氮化硼膜。通过控制血浆功率,将包括SP^3键合的硼膜沉积在距离等离子体中心的合适距离的基板上。由石英玻璃制成的垂直等离子体反应器已用于获得BN沉积的更好结果。将BN管插入石英管中,以防止低压电感氢等离子体对其石英壁进行化学溅射。通过加热底物并向基板施加负偏置电压,纯HBN膜沉积。热钨丝对气体的辅助激发充气可有效获得高质量的HBN膜。可以预期,将通过控制这种辅助因子来检测具有立方或葡萄菌结构的BN膜。3。一种新型的垂直不锈钢等离子体反应器用作化学传输实验的试验。高功率微波炉(MW)放电产生了高度激发的血浆。但是,由于一部分反应堆的过热,很难长期赋予血浆高功率。因此,有必要改善反应堆的水冷却系统,以沉积高质量和厚的BN膜。

项目成果

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AKASHI Kazuo其他文献

AKASHI Kazuo的其他文献

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{{ truncateString('AKASHI Kazuo', 18)}}的其他基金

Rapid Nitriding of Aluminum Using Nitrogen Glow Plasma
使用氮辉光等离子体对铝进行快速渗氮
  • 批准号:
    09555226
  • 财政年份:
    1997
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
The Effect of Bias Voltage Application to Metals to Promote Their Nitriding and Carburizing in High-Density Inductively Coupled Plasma
高密度电感耦合等离子体中对金属施加偏压促进渗氮和渗碳的效果
  • 批准号:
    06650814
  • 财政年份:
    1994
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
Rapid Growth of Diamond Film by Combustion Plasma Coupled Inductively with Radio Frequency Power
燃烧等离子体与射频功率感应耦合快速生长金刚石薄膜
  • 批准号:
    04555159
  • 财政年份:
    1992
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)

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