Chemical Beam Epitaxy of Chalcopyrite Semiconductors

黄铜矿半导体的化学束外延

• 批准号: 05452094
• 负责人: YOSHINO Junji
• 金额: $ 4.67万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05452094/
• 关键词: Chalcopyrite; Widegap Semiconductors; Chemical Beam Epitaxy; CBE; Epitaxial Growth; in-situ Observation

We have investigated the growth of chalcopyrite materials, AgGaS_2 AND AgGaSe_2, which have potential for light-emitting devices and nonlinear potics on GaAs (001) substrates by using chemical beam epitaxy. The major results obtained are as follows.1. AgGaS_2 epitaxial films have been successfully grown on GaAs (100) substrate oriented c-axis normal to the substrate surface by using elemental silver, trimethylgallium, and hydrogen sulfide as source materials, for the first time2. in-situ observation by reflection high enegy electron diffraction (RHEED) measurements reveal the initial nucleation mechanism from island growth to layr-by-layr growth, which is indicated by the streaked RHEED pattern, and rapid lattice relaxation.3. It is found that the deposition of AgGaS_2 has been obtained only at very limited substrate temperature range of 600-630 ﾟC,and excess sulfur beams reduce the growth rate and crystalline quality.4. A AgGaS_2 epitaxial layr grown at optimized condition has shown band-edge photoluminescence emission at low temperature, which demonstrate good crystalline quality of the epitaxial layr.5. AgGaSe_2 layrs oriented a-axis normal to the substrate have been grown on GaAa (100) substrates by using all elemental sources of silver, gallium, and selenium.

我们已经研究了黄铜矿材料Aggas_2和Aggase_2的生长，它们具有使用化学束外径的GAAS（001）底物上发光设备和非线性增强的潜力。获得的主要结果如下1。通过使用元素银，三甲基甲基铝和硫化氢作为源材料，在GAAS（100）底物的底物C轴（100）底物的C轴上已成功生长的外延膜成功生长。通过反射高能电子衍射（RHEED）测量结果揭示了从岛生长到逐层生长的初始核机制，这是由条纹的Rheed模式和快速的晶格松弛指示的。3。发现AGGAS_2的沉积仅在非常有限的底物温度范围为600-630°C下获得，并且超过硫束降低了生长速率和结晶质量。4。在优化条件下生长的Aggas_2外延外行显示出在低温下的带缘光致发光发射，这表明了外延外layr.5的良好结晶质量。 Aggase_2通过使用所有元素源的银，镀和硒来生长在GAAA（100）底物上，将其定向的A轴垂直于基板生长。

项目成果

M.Yamamoto, K.Ishi, K.Tanaka, T.Ogawa, K.Hara, H.Kukimoto, H.Munekata, and J.Yoshino: ""Chemical Beam Epitaxy of AgGaS_2"" Jpn.J.Appl.Phys.(to be submitted).

M.Yamamoto、K.Ishi、K.Tanaka、T.Okawa、K.Hara、H.Kukimoto、H.Munekata 和 J.Yoshino：“AgGaS_2 的化学束外延”Jpn.J.Appl.Phys。

M.Yamamoto et al: "Low Temperature Metalorganic Vapor Phase Epitaxal Growth of CuAl_XGa_<1-X>(S_ySe_<1-y>)_2" Jpn.J.Appl.Phys.33. L575-L577 (1994)

M.Yamamoto 等人：“CuAl_XGa_<1-X>(S_ySe_<1-y>)_2 的低温金属有机气相外延生长”Jpn.J.Appl.Phys.33。

M.Yamamoto,et al.: "Optically Pumped Stimulated Emission from CuGa(S_<0.65>Se_<0.35>)_2/CuAl_<0.3>Ga_<0.7>(S_<0.64>Se_<0.35>)_2 Double Heterostructure Grown by Metalorganic Vapor Phase Epitaxy" Jpn.J.Appl.Phys.33. L624-L626 (1994)

M.Yamamoto 等人：“CuGa(S_<0.65>Se_<0.35>)_2/CuAl_<0.3>Ga_<0.7>(S_<0.64>Se_<0.35>)_2 双异质结构的光泵受激发射

J.Yoshino, K.Hara, and H.Kukimoto: ""Epitaxial Growth of Wide-bandgap Chalcopyrite Semiconductors and Its Application for Visible Light-Emitting devices"" Proceedings of 18th State-of-the-Art Program on Compound Semiconductors, Ed. by R.E.Enstrom et al.40

J.Yoshino、K.Hara 和 H.Kukimoto：“宽带隙黄铜矿半导体的外延生长及其在可见光发射器件中的应用”第 18 届化合物半导体最先进计划论文集，Ed

K.Ishii, T.Abe, H.Munekata, and J.Yoshino: "" Chemical Beam Epitapixy of AgGaSe_2 "" Jpn.J.Appl.Phys.(to be submitted).

K.Ishii、T.Abe、H.Munekata 和 J.Yoshino：“AgGaSe_2 的化学束外延”Jpn.J.Appl.Phys.（待提交）。