1-D Multi-Gate FETs: Tailoring the Potential Landscape on the Nanoscale

一维多栅极 FET：定制纳米尺度的潜在前景

• 批准号: 266030637
• 负责人: Professor Dr. Joachim Knoch
• 金额: --
• 依托单位: Institut für Halbleitertechnik (IHT)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2015
• 资助国家: 德国
• 起止时间: 2014-12-31 至 2016-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/266030637?language=en
• 关键词: Multi; Gate; FETs; Tailoring; Potential

One-dimensional (1-D) materials such as nanowires and nanotubes have attracted a great deal of attention recently as buildings blocks of future nanoelectronics systems. This interest is in part due to the small geometry that allows realizing optimum scalability of the devices due to the strong electrostatic gate control in e.g. wrap-gate device structures. In addition, nanowires/tubes enable one-dimensional electronic transport that has a number of benefits such as a rather long mean free path for scattering or the highly linear transfer characteristics. Furthermore, the combination of 1-D transport and excellent gate control enables a tight control over the potential distribution within the device. While it is common practice to use gates in order to manipulate the potential profile of transistor device based on novel materials so far only a small number of gates has been used and these gates exhibit a length on the order of several tens to hundreds of nanometers and/or are placed far apart from each other prohibiting a manipulation of the potential profile on the nanoscale. The aim of the present proposal is to realize a 1-D multi-gate device architecture where a large number of gates (on the order of 10 and more) with lengths in the few nanometer range will be placed next to each other with a few nanometers inter-gate distances. This device layout allows tailoring the conduction/valence band profile along the device on the nanoscale due to the excellent gate control in 1-D nanostructures; hence this band tailoring allows studying the full potential of 1-D structures for nanoelectronics. Two different demonstrations will be pursued within the project: First, a gate-induced superlattice structure will be realized in e.g. carbon nanotubes and/or InAs nanowires. With appropriate dimensions this superlattice will serve as an energy filter enabling a so-called steep slope transistor that operates at very low supply voltages and hence facilitates ultra-low power nanoelectronics systems. Second, we will adjust the band profile along the channel in order to maximize the linearity of the transfer characteristics of the 1-D device.

纳米线和纳米管等一维（1-D）材料最近引起了广泛的关注，因为建筑物的建筑物阻滞了未来的纳米电子系统。这种兴趣部分是由于小的几何形状允许实现设备的最佳可扩展性，这是由于强大的静电门控件（例如，例如包裹盖设备结构。此外，纳米线/管启用了一维电子传输，具有许多好处，例如散射的平均均值自由路径或高度线性传递特性。此外，1-D传输和出色的栅极控制的组合可以严格控制设备内电势分布。虽然通常使用大门来操纵基于新型材料的晶体管设备的潜在曲线是普遍的做法/或将彼此远距离放置，禁止操纵纳米级的潜在轮廓。本提案的目的是实现一个1D多门设备架构，其中大量的门（按10及以上的顺序），长度在几个纳米范围内，将彼此放置，几个范围纳米间距离距离。由于1-D纳米结构中出色的栅极控制，因此该设备布局允许沿纳米级设备的设备调整传导/价带轮廓。因此，该带裁缝允许研究纳米电子学的1-D结构的全部潜力。项目中将进行两种不同的示威活动：首先，将在例如碳纳米管和/或INAS纳米线。在适当的尺寸的情况下，该超级晶格将用作能量滤波器，使能够在非常低的电源电压下运行的所谓陡坡晶体管，因此有助于超低功率纳米电子系统。其次，我们将沿通道调整频带轮廓，以最大程度地提高1-D设备传输特性的线性。

项目成果

Alternatives for Doping in Nanoscale Field‐Effect Transistors

• DOI: 10.1002/pssa.201700969
• 发表时间: 2018-04
• 期刊: physica status solidi (a)
• 作者: Felix Riederer;T. Grap;Sergej Fischer;M. Mueller;Daichi Yamaoka;Bin Sun;Charu Gupta;K. Kallis;J. Knoch