Strukturnahe Modellierung von Nanoscale Multiple-Gate FETs zur Schaltungssimulation

用于电路仿真的纳米级多栅极 FET 的结构建模

• 批准号: 182932826
• 负责人: Professor Dr.-Ing. Alexander Klös
• 金额: --
• 依托单位: Kompetenzzentrum für Nanotechnik und Photonik (NanoP)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2010
• 资助国家: 德国
• 起止时间: 2009-12-31 至 2012-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/182932826?language=en
• 关键词: Strukturnahe; Modellierung; von; Nanoscale; Multiple

For the simulation of integrated circuits are so-called compact models used in network simulators. They allow analysis of complex circuits in a reasonable computation time. The demand for numerical efficiency requires a thorough investigation of physical effects which must be taken into account in modeling and which in contrast can be neglected.Through the extension of the project with respect to the original project proposal the objectives for analytical modeling of multiple-gate FETs are complemented by the inclusion of novel device structures such as junction-less MOSFETs.The project focuses on modeling of the following effects:- carrier confinement in multiple-gate MOSFETs- ballistic carrier transport- self-heating effects in SOI structures.Furthermore model equations for intrinsic capacitances will be derived.

为了模拟集成电路，是网络模拟器中使用的所谓紧凑型模型。它们允许在合理的计算时间内分析复杂电路。对数值效率的需求需要对物理效应进行彻底的研究，这些效应必须在建模中考虑到可以忽略的物理效应。通过该项目扩展到原始项目提出的项目扩展多层fet的分析建模的目标，包括诸如无效的磁盘效应的新型设备结构（如诸如驱动器构建效果）的新型设备结构。将得出固有电容的Furthermore模型方程。

项目成果

Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region

• DOI: 10.1016/j.sse.2013.02.044
• 发表时间: 2013-12
• 期刊: Solid-state Electronics
• 影响因子: 1.7
• 作者: T. Holtij;M. Schwarz;A. Kloes;B. Iñíguez

Compact Model for Short-Channel Junctionless Accumulation Mode Double Gate MOSFETs

• DOI: 10.1109/ted.2013.2281615
• 发表时间: 2014-02-01
• 期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
• 影响因子: 3.1
• 作者: Holtij, Thomas;Graef, Michael;Iniguez, Benjamin
• 通讯作者: Iniguez, Benjamin

Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs

轻掺杂双栅极 MOSFET 中二维静电的分析紧凑建模框架

• DOI: 10.1016/j.sse.2011.11.023
• 发表时间: 2012
• 期刊: Solid-state Electronics
• 影响因子: 1.7
• 作者: M. Schwarz;T. Holtij;A. Kloes;B. Iñíguez
• 通讯作者: B. Iñíguez

Performance Study of a Schottky Barrier Double-Gate MOSFET Using a Two-Dimensional Analytical Model

使用二维解析模型研究肖特基势垒双栅极 MOSFET 的性能

• DOI: 10.1109/ted.2012.2235146
• 发表时间: 2013
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: M. Schwarz;T. Holtij;A. Kloes;B. Iniguez
• 通讯作者: B. Iniguez