SHF: EAGER: Toward Energy-Efficient Heterogeneous Computing Integrating Polymorphic Magnetic and CMOS Devices

SHF：EAGER：迈向集成多态磁性和 CMOS 器件的节能异构计算

• 批准号: 2021230
• 负责人: Shaloo Rakheja
• 金额: $ 29.94万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-09-15 至 2023-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2021230&HistoricalAwards=false
• 关键词: SHF; EAGER; Toward; Energy; Efficient

The integration of non-conventional materials and devices with silicon Complementary Metal Oxide Semiconductor (CMOS) technology can enable a new type of computing platform with potential benefits related to area, energy efficiency, and resiliency. In this regard, storing and manipulating information in magnetic devices is promising. This is because, unlike CMOS devices, information in magnetic devices can be stored without any energy dissipation, while energy is needed only to read or write information. This low-power operation of magnetic devices is highly advantageous for applications such as Internet of Things and intelligent sensing that have low operating power requirements. This research will connect the physics of such magnetic devices with their use in circuits in which magnetic devices co-exist with and complement silicon devices for enhanced functionality and user experience. Results from this research will be incorporated into a hands-on circuit design workshop organized annually at New York University (NYU). Specifically, students will learn about the physics of magnets in table top experiments and interactive online learning tools. The project will also develop content on magnetic memory that will be introduced in a course on nanoelectronics devices and circuits taught annually at NYU. The project will also publicly release the device models and simulation data generated in this research via the science and engineering gateway hosted at Purdue University, known as the nanoHUB, to benefit researchers and educators working in related fields.While other possibilities exist, this particular project will focus on two specific magnetic devices, namely the voltage-controlled topological-spin switch (vTOPSS) and the magneto-electric spin-orbit (MESO) device. These magnetic devices offer 10 to 100 times superior energy efficiency for binary operations compared to their magnetic counterparts. Another unique feature of these devices is that their logic functionality can be configured post-fabrication, which translates into resilience and area- and power benefits at the circuit and system level. Physics-based models of the latency, energy dissipation, thermal stability, and error-rate of vTOPSS and MESO device will be developed and calibrated against large-scale Monte-Carlo simulations. Impact of potential interconnects, including metallic and semiconducting nanowires, on device performance will be quantified. Device-level models will be used to develop a standard cell library of Boolean logic gates with vTOPSS and MESO as the switching elements. The cell library will enable the quantification of performance metrics of magnetic-CMOS computing platform at scale. The physics-to-circuits approach adopted in this research will drive innovative concepts in circuit design that can maximize the competitiveness of the proposed technology.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非惯性材料和设备与硅互补金属氧化物半导体（CMOS）技术的整合可以实现具有与面积，能效和弹性有关的潜在优势的新型计算平台。在这方面，在磁性设备中存储和操纵信息是有希望的。这是因为，与CMOS设备不同，可以在没有任何能量耗散的情况下存储磁性设备中的信息，而只需读取或写入信息就需要能量。磁性设备的这种低功率操作对于诸如物联网和具有低操作功率需求的智能传感等应用程序非常有利。这项研究将将此类磁性设备的物理学与在电路中的使用联系起来，其中磁性设备与硅设备共存并补充了以增强功能和用户体验。这项研究的结果将纳入每年在纽约大学（NYU）组织的动手巡回演出设计研讨会中。具体来说，学生将在桌面顶级实验和交互式在线学习工具中了解磁铁的物理。该项目还将在磁性内存上开发内容，该内容将在每年在纽约大学教授的纳米电子设备和电路课程中引入。该项目还将通过在普渡大学（被称为纳米ub）的科学和工程网关中公开释放本研究产生的设备模型和模拟数据，以使研究人员和在相关领域工作的研究人员和教育工作者受益。尽管存在其他可能性，但该特定项目将集中在两个特定的磁性设备上，即电压控制的拓扑旋转器（VTopor）（Morsecter）（Morsect）和Morsect-nemect-nemect（Morsect）（Morsect-ectoter）（morsectoto-the Morsect-necto-the Morsect-necto）eelter（morsecto the Morsectoto）。这些磁性设备可为二元操作提供10至100倍的能源效率，而二元操作与它们的磁性相比。这些设备的另一个独特功能是，它们的逻辑功能可以在装修后配置，从而转化为弹性以及在电路和系统级别的区域和功率益处。基于物理学的VTOPS和MESO设备的潜伏期，能量耗散，热稳定性以及错误速率的模型将针对大型蒙特卡罗模拟进行开发和校准。潜在互连（包括金属和半导体纳米线）对设备性能的影响。设备级模型将用于开发带有VTOPSS和MESO作为开关元素的布尔逻辑门的标准单元格库。细胞库将对磁性CMOS计算平台的性能指标进行量化。这项研究中采用的物理对电路方法将推动电路设计中的创新概念，该概念可以最大程度地提高拟议技术的竞争力。该奖项反映了NSF的法定任务，并认为值得通过基金会的知识分子优点评估来获得支持，并具有更广泛的影响标准。