Mechanism-Based Approaches for CVD/ALD of Cu Barriers

基于机制的铜势垒 CVD/ALD 方法

• 批准号: 0911640
• 负责人: Lisa McElwee-White
• 金额: $ 41.5万
• 依托单位: University of Florida
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-09-01 至 2013-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0911640&HistoricalAwards=false
• 关键词: Mechanism; Based; Approaches; CVD; ALD

This Research award in the Inorganic, Bioinorganic and Organometallic Chemistry program supports work by Professors Lisa McElwee-White and Tim Anderson at the University of Florida to develop processes for the growth of thin films of barrier material for Cu metallization used in the manufacture of advanced integrated circuits. The initial target material is ruthenium, which can serve in interfacial layers for seedless Cu metallization. Mechanism-based design accompanied by computational chemistry allows evaluation of Ru-containing film growth precursors before synthesis. An important aspect is the use of alternative precursor delivery systems designed for all molecules independent of volatility, thus expanding the range of possible precursors. Following preparation of potential precursors, rapid screening selects the most promising candidates for film deposition and characterization. Collaboration with industry facilitates process development and optimization including reactor modeling. Graduate students are trained in interdisciplinary team-based problem solving in chemistry, chemical engineering and materials science. Industrial internships, mentoring of undergraduate researchers and interactions with industrial research personnel are used to broaden the students' perspectives. A workshop that one of the PIs (Anderson) has presented on career development for new and prospective faculty for the last 6 years at national meetings is being adapted for presentation to chemistry faculty. The deposition of thin films is a key technological capability. Innovation often relies on the ability to deposit films with very specific composition, surface morphology, microstructure, thickness, and interfacial chemistry. Developing a process for deposition of a barrier material for Cu metallization will address a current challenge in the manufacture of advanced integrated circuits.

该研究奖在佛罗里达大学丽莎·麦克尔维·怀特（Lisa McElwee-White）和蒂姆·安德森（Tim Anderson）教授的工作中，在佛罗里达大学的蒂姆·安德森（Tim Anderson）的工作中为壁垒薄膜的生长开发了用于高级集成电路制造的CU金属化薄膜的过程。 最初的靶材料是唯一的，可以在界面层中用于无蛋cu金属化。 基于机理的设计伴随着计算化学，可以在合成之前评估含有RU的膜生长前体。 一个重要方面是使用专为独立于波动率的所有分子设计的替代前体递送系统，从而扩大了可能的前体范围。 在准备潜在的前体后，快速筛选选择了膜沉积和表征的最有希望的候选者。 与行业的合作促进了过程开发和优化，包括反应堆建模。 研究生在化学，化学工程和材料科学方面的基于跨学科团队的问题进行培训。 工业实习，指导本科研究人员以及与工业研究人员的互动被用来扩大学生的观点。 在过去的6年中，在全国会议上，PIS（安德森）的一个新教师的职业发展介绍了一个讲习班，正在为化学教师提供介绍。 薄膜的沉积是关键的技术能力。 创新通常取决于能够以非常特异性的组成，表面形态，微结构，厚度和界面化学沉积膜的能力。 开发用于沉积cu金属化屏障材料的过程将解决当前制造高级综合电路的挑战。