High Temperature Electronic Devices Based on Wide Bandgap Thin Films

基于宽带隙薄膜的高温电子器件

• 批准号: 0853789
• 负责人: Raj Singh
• 金额: $ 35万
• 依托单位: University of Cincinnati Main Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-08-01 至 2012-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0853789&HistoricalAwards=false
• 关键词: Temperature; Electronic; Devices; Based; Wide

The objectives of this research are to synthesize and characterize thin films of high resistivity undoped, and semi-conducting p- and n-doped polycrystalline diamond and AlN thin films suitable for the fabrication of high temperature electronic devices, and to investigate the fabrication of high temperature microelectronic devices where silicon devices are not useful. The approach consists of synthesis of diamond films by microwave plasma enhanced chemical vapor deposition and measurement of their electrical and mechanical properties. The influence of process parameters on the composition, crystal quality, mechanical strength, and the electrical properties of the films will be studied. Advanced materials characterization techniques will be used to characterize nanoscale microstructure, which will be related to the properties of the films. Electrical properties such as I-V and C-V behaviors and carrier concentration will be measured over a range of temperatures. Young?s moduli will be measured on existing Michelson interferometer system. Fabrication of devices such as Schottky diodes, pressure sensor, and a voltage multiplier stack will be investigated. On a broader scale, the proposed research has potentials for enormous payoffs by developing electronics for operation above 500oC for aircraft, spacecraft, automobiles and nuclear reactors thereby reducing engine maintenance costs, and improving reliability and performance efficiencies. An essential and important component of this research will be to provide education and training of graduate students, post-docs, and undergraduate seniors. In addition, minority/women and high school students will be mentored and exposed to this research through programs at our university. A significant outreach to high schools is proposed.

这项研究的目的是合成和表征高电阻率的薄膜，以及不稳定的薄膜，半导体和N掺杂的P-和N掺杂的多晶钻石和ALN薄膜适合于制造高温电子设备，并研究硅硅设备不用有用的高温温度的制造。该方法包括通过微波等离子体增强的化学蒸气沉积以及其电气和机械性能的测量来合成钻石膜。将研究过程参数对膜组成，晶体质量，机械强度和电气特性的影响。先进的材料表征技术将用于表征纳米级微结构，这将与膜的性质有关。 I-V和C-V行为和载体浓度等电气特性将在一系列温度下进行测量。将在现有的米歇尔森干涉仪系统上测量Young的Moduli。将研究肖特基二极管，压力传感器和电压乘数堆栈等设备的制造。在更广泛的范围内，拟议的研究具有通过为飞机，航天器，汽车和核反应堆的500oC运营的电子设备开发电子设备的潜力，从而降低了发动机维护成本，并提高了可靠性和性能效率。这项研究的重要组成部分是为研究生，培训后和本科生提供教育和培训。此外，还将通过大学的课程对少数民族/妇女和高中生进行指导并接触这项研究。提出了对高中的重大宣传。