SBIR Phase I: Deep UV LED with High Quality p-AlInGaN Layers by Digital Doping Control

SBIR 第一阶段：采用数字掺杂控制的具有高质量 p-AlInGaN 层的深紫外 LED

• 批准号: 0839492
• 负责人: Max Shatalov
• 金额: --
• 依托单位: Sensor Electronic Technology, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-01-01 至 2009-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0839492&HistoricalAwards=false
• 关键词: SBIR; Phase; Deep; UV; LED

This Small Business Innovation Research Project will develop next generation high power deep ultraviolet light emitting diodes with high quality p-type AlInGaN layers with digital doping control. Advancements in AlInGaN material system and device technology have resulted in commercially viable UV light emitting diodes (LEDs) operating in the spectral region from 240 nm to 365 nm.This innovative technology is positioned to create new applications that were previously unattainable due to the inherent limitations of existing UV lamps or lasers. Primary markets include water/air disinfection, bio-medical and analytical instrumentation, fluorescence sensing, ink curing, and phototherapy.

该小型企业创新研究项目将开发具有数字掺杂控制的高质量 p 型 AlInGaN 层的下一代高功率深紫外发光二极管。 AlInGaN 材料系统和器件技术的进步带来了商业上可行的紫外发光二极管 (LED)，其工作光谱范围为 240 nm 至 365 nm。这项创新技术旨在创造以前由于固有限制而无法实现的新应用。现有的紫外线灯或激光器。主要市场包括水/空气消毒、生物医学和分析仪器、荧光传感、墨水固化和光疗。