SBIR Phase IB: High quality AlGaN layers by fast growth rate MEMOCVD

SBIR IB 阶段：通过快速 MEMOCVD 生长获得高质量 AlGaN 层

• 批准号: 1003474
• 负责人: Max Shatalov
• 金额: $ 3.73万
• 依托单位: Sensor Electronic Technology, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-01-01 至 2010-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1003474&HistoricalAwards=false
• 关键词: SBIR; Phase; IB; quality; AlGaN

This Small Business Innovation Research Project will develop an innovative approach for epitaxial deposition of high quality thick (Al)(In)(Ga)N layers with low dislocation density. Accomplishment of the proposed effort will provide technology for next generation UV LED structures, which currently require improvements in growth of thick and doped AlGaN layers with low density of threading dislocations and point defects. (Al)(In)(Ga)N based deep UV LEDs represent a new class of compact and environmentally stable semiconductor UV light sources. Deep UV LEDs penetrate existing markets that require compact, rugged and environmentally friendly UV radiation sources. This innovative technology is positioned to create new applications that were previously unattainable due to the inherent limitations of existing UV lamps or lasers. Primary markets include water/air disinfection, bio-medical and analytical instrumentation, fluorescence sensing, ink curing, and phototherapy.

该小型企业创新研究项目将开发一种创新方法，用于外延沉积具有低位错密度的高质量厚 (Al)(In)(Ga)N 层。这项工作的完成将为下一代 UV LED 结构提供技术，目前该结构需要改进具有低密度螺纹位错和点缺陷的厚掺杂 AlGaN 层的生长。基于 (Al)(In)(Ga)N 的深紫外 LED 代表了一种新型紧凑且环境稳定的半导体紫外光源。深紫外 LED 渗透到需要紧凑、坚固且环保的紫外辐射源的现有市场。这项创新技术旨在创造以前由于现有紫外线灯或激光器的固有限制而无法实现的新应用。主要市场包括水/空气消毒、生物医学和分析仪器、荧光传感、墨水固化和光疗。