Third International Symposium on Gas-Phase and Surface Chemistry of Vapor Phase Materials Processing

第三届气相材料加工的气相和表面化学国际研讨会

• 批准号: 0610181
• 负责人: Mark Swihart
• 金额: $ 0.4万
• 依托单位: SUNY at Buffalo
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-06-01 至 2007-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0610181&HistoricalAwards=false
• 关键词: Third; International; Symposium; Gas; Phase

AbstractProposal Number: CTS-0610181Principal Investigator: Mark T. SwihartInstitution: SUNY BuffaloProposal Title: Third International Symposium on Gas-Phase and Surface Chemistry of Vapor Phase Materials Processing The objective of the Third International Symposium on Fundamental Gas-Phase and Surface Chemistry of Vapor Phase Materials Processing is to bring together researchers that are studying such processes (chemical vapor deposition, dry etching, aerosol synthesis of nanomaterials, etc.) in a variety of contexts and for a variety of applications. This symposium provides a unique venue for communication among these researchers who would otherwise attend conferences more narrowly focused on a particular application or methodology, and who therefore would not otherwise come into contact. For example, there are may shared interests and opportunities for cross-fertilization between researchers working in microelectronics and those working on thin film deposition in other contexts, such as hard coatings.Intellectual Merit: This symposium will address the state of the art in vapor-phase synthesis and processing of materials with emphasis on gas-phase and surface chemistry and its effects on growth/etching rates and material morphology and properties. Materials of interest include semiconductors (elemental and compound), oxides, carbon in all forms, metals, and ceramics, processed in the form of thin films, bulk materials, or nanoparticles. Processes of interest include (but are not limited to): chemical vapor deposition (thermal, rapid thermal, plasma-assisted, photon-assisted, ion-assisted, particle-assisted etc.), atomic layer deposition, vapor-phase etching, molecular- and chemical-beam epitaxy, and aerosol synthesis. Particular areas of emphasis include kinetics of gas-phase and surface reactions underlying the vapor-phase processing of materials, including fundamental measurements of kinetic constants as well as in-situ probing during film growth/etching and particle synthesis; surface and interfacial chemistry during heteroepitaxy and selective epitaxy; new precursors and growth/etching chemistries; quantum-chemistry calculations for predicting thermochemistry, mechanisms, and rate parameters in the gas phase and on surfaces; in-situ monitoring and control of materials composition, morphology, stress, electrical, and optical properties; fundamentals and in situ monitoring of gas-to-particle conversion; particle formation issues during CVD; models describing the kinetics and transport phenomena that occur during vapor-phase materials processing, with special emphasis on hierarchical models leading from the molecular to the mesoscopic level (properties) and from the mesoscopic to the macroscopic level (processes).Broader Impacts: NSF funding will be used to support the participation of graduate students and junior faculty in this symposium as speakers, poster presenters, or attendees. Particular efforts will be made to attract and support female researchers and members of minority groups underrepresented in science and engineering.

摘要提案编号：CTS-0610181主要研究员：Mark T. Swihart机构：纽约州立大学布法罗分校提案标题：第三届国际气相和气相材料加工表面化学研讨会第三届国际基础气相和气相表面化学研讨会的目标材料加工将研究此类工艺（化学气相沉积、干法蚀刻、气溶胶合成）的研究人员聚集在一起纳米材料等）在各种环境和各种应用中。这次研讨会为这些研究人员之间的交流提供了一个独特的场所，否则他们将参加更狭隘地关注特定应用或方法的会议，因此他们不会进行接触。例如，微电子领域的研究人员和其他领域（例如硬涂层）薄膜沉积领域的研究人员之间可能存在共同的兴趣和交叉融合的机会。 智力优势：本次研讨会将讨论气相沉积领域的最新技术材料的相合成和加工，重点是气相和表面化学及其对生长/蚀刻速率以及材料形态和性能的影响。感兴趣的材料包括半导体（元素和化合物）、氧化物、各种形式的碳、金属和陶瓷，以薄膜、块体材料或纳米粒子的形式加工。感兴趣的工艺包括（但不限于）：化学气相沉积（热、快速热、等离子体辅助、光子辅助、离子辅助、粒子辅助等）、原子层沉积、气相蚀刻、分子沉积- 以及化学束外延和气溶胶合成。特别强调的领域包括材料气相加工背后的气相和表面反应动力学，包括动力学常数的基本测量以及薄膜生长/蚀刻和颗粒合成过程中的原位探测；异质外延和选择性外延过程中的表面和界面化学；新的前体和生长/蚀刻化学物质；用于预测气相和表面的热化学、机理和速率参数的量子化学计算；材料成分、形态、应力、电学和光学特性的原位监测和控制；气体到颗粒转化的基础知识和原位监测； CVD 期间的颗粒形成问题；描述气相材料加工过程中发生的动力学和输运现象的模型，特别强调从分子到介观水平（性质）以及从介观水平到宏观水平（过程）的分层模型。更广泛的影响： NSF 资助将用于支持研究生和初级教师作为演讲者、海报展示者或与会者参与本次研讨会。我们将特别努力吸引和支持女性研究人员以及科学和工程领域代表性不足的少数群体成员。