Emerging Reliability Issues of Nano-Scale SOI Technology

纳米级 SOI 技术新出现的可靠性问题

• 批准号: 0514766
• 负责人: Dimitrios Ioannou
• 金额: $ 24万
• 依托单位: George Mason University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-08-01 至 2009-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0514766&HistoricalAwards=false
• 关键词: Emerging; Reliability; Issues; Nano; Scale

The objective of this research is the investigation of the following reliability concerns of nano-scale Silicon on Insulator (SOI) chip technology and devices: Hot Carriers (HC), Negative Bias Temperature Instability (NBTI), and Electro-Static Discharge (ESD) protection. The approach will be first to address each of the above reliability concerns individually, and identify the underlying mechanisms in each case. Following this, their interdependence and interaction will be addressed on account of the fact that the responsible mechanisms are usually active simultaneously. The investigations will be primarily experimental, on samples supplied by leading semiconductor manufactures, but substantial numerical simulations will also be done as/when needed. Two Ph.D. students will work under this proposal, and the research group will remain focused and informed through student summer internships and frequent discussions with leading semiconductor industry collaborators.The expected impact of this research derives from the realization that when SOI devices are shrunk at the nano-level, they operate at elevated temperatures and the underlying degradation mechanisms behave in complicated ways; and the expectation that SOI will play a major role in future silicon chip technology nodes. This research will help identify the best designs for optimal reliability and performance. The educational environment will be impacted and enhanced by having several undergraduates (including underrepresented groups) "join the team" and work on their senior design projects. Further, the group will mentor the teaching assistants for the microelectronics courses and provide support to set-up and update experiments, prepare manuals, and maintain the necessary simulation tools and design software.

这项研究的目的是研究纳米级硅在绝缘体（SOI）芯片技术和设备上的可靠性问题：热载体（HC），负偏置温度不稳定性（NBTI）和电静电放电（ESD）保护。该方法将首先分别解决上述可靠性问题，并确定每种情况下的潜在机制。之后，由于负责任的机制通常同时是活跃的事实，他们的相互依赖性和相互作用将得到解决。该研究将主要是在领先的半导体制造商提供的样品上进行的，但是在需要时也将进行大量数值模拟。两位博士学生将根据该提案的工作，研究小组将通过学生暑期实习和与领先的半导体行业合作者进行频繁讨论的专注和告知。这项研究的预期影响源于认识到，当SOI设备在纳米级缩水时，他们会在升高的温度下运作，并且在升高的温度下运作，并且潜在的降级机械机构在复杂的机构中均在复杂的方式中；并期望SOI将在未来的硅芯片技术节点中发挥重要作用。这项研究将有助于确定最佳可靠性和性能的最佳设计。教育环境将通过拥有几个本科生（包括代表性不足的群体）“加入团队”并从事高级设计项目来影响和增强教育环境。此外，该小组将指导助教的微电子课程，并为设置和更新实验，准备手册以及维护必要的仿真工具和设计软件提供支持。