Nanoscale Field Effect Diode-Based Memory and Electrostatic Protection Devices

基于纳米级场效应二极管的存储器和静电保护器件

• 批准号: 0901236
• 负责人: Dimitrios Ioannou
• 金额: $ 34.95万
• 依托单位: George Mason University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-08-15 至 2013-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0901236&HistoricalAwards=false
• 关键词: Nanoscale; Field; Effect; Diode; Based

"This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5)." Nano-scale Field Effect Diode-Based Memory and Electrostatic Protection DevicesThe objective of this research is to design, fabricate and test Field-Effect-Diode based memory cells which break through the area/performance trade-off of conventional static and dynamic cells. The proposed research is in response to the widely recognized need for urgent progress in memory technology, as abundantly demonstrated by large numbers of dedicated sessions and invited talks in many prestigious semiconductor conferences and workshops. As a secondary objective, Field-Effect-Diodes will be explored for electrostatic discharge protection applications.The approach is to combine the strengths of the Thin-Capacitively-Coupled-Thyristor with the strengths of the nanoscale Field-Effect-Diode and exploit the inherent bi-stable storage mechanism (negative differential resistance). The research involves demanding device physics and advanced nano-fabrication technology, and is aimed at exploring the structure and design space of Multi-Gate, Fin and Nanowire Silicon-on-Insulator Field-Effect-Diode, Thyristor-like devices. For memory applications, leakage control and small cell size drive the device design, whereas for electrostatic protection large forward breakdown voltage must be achieved. The research has the potential for transformational impact on memory cell design through the introduction of radically different cells, which nevertheless remain compatible with modern silicon technology, as the semiconductor industry enters the "nano-scale" era. These cells and the new nano-fabrication technology will add to the broader area of nanoelectronics, vital for the future technological dominance of the USA. Research and undergraduate students (two females) will join our team, and our results will form the basis for our new distance education courses.

“该裁决是根据2009年《美国复苏与再投资法》（公法111-5）资助的。”纳米级场效应基于二极管的内存和静电保护devicesthe这项研究的目标是设计，制造和测试基于野外效应 - 二极管的内存单元，这些内存细胞破坏了传统静态和动态细胞的面积/性能权衡。拟议的研究是针对广泛认可的记忆技术进步的广泛认识的，这是由许多著名的半导体会议和讲习班中的大量专门会议和邀请的演讲所证明的。作为次要目标，将探索用于静电放电保护应用的现场效应 - 二极管。该方法是将薄纤维耦合的thyristor的强度与纳米级现场效应 - 二极管的强度相结合，并利用固有的双稳定存储机制（负差异电阻）。该研究涉及苛刻的设备物理和先进的纳米制作技术，旨在探索多门，鳍和纳米式硅在绝缘子现场效应二极管，类似晶状体的设备的结构和设计空间。对于内存应用，泄漏控制和小单元尺寸驱动设备设计，而对于静电保护，必须实现大型向前击穿电压。这项研究具有通过引入根本不同的细胞来对记忆细胞设计产生变革的影响，尽管半导体行业进入“纳米级”时代，但它仍然与现代硅技术兼容。这些细胞和新的纳米制作技术将增加更广泛的纳米电子产品，这对于美国未来的技术优势至关重要。研究和本科生（两名女性）将加入我们的团队，我们的结果将构成我们新的远程教育课程的基础。