Nitride Quantum Wells and Photonic Structures - Growth, Optical Studies, and Applications

氮化物量子阱和光子结构 - 生长、光学研究和应用

• 批准号: 0203373
• 负责人: Jingyu Lin
• 金额: $ 49.19万
• 依托单位: Kansas State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-05-01 至 2006-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0203373&HistoricalAwards=false
• 关键词: Nitride; Quantum; Wells; Photonic; Structures

This project pursues several interconnected research areas: 1) Optimizing III-nitride material quality; n- and p-type doping, particularly for AlGaN ternary alloys and InAlGaN quaternary al-loys with relatively high Al contents (x 0.5); and reduction of dislocations and line defects. When submicron-strip lateral epitaxial overgrowth is employed, relaxation of excess strain at the mesa edges may dominate, resulting in fewer dislocations above the window region. The poten-tial of lattice-matched quaternary quantum wells (QWs) of GaN/InAlGaN as active media for UV emitters with improved performance will also be explored. 2) Fabricating and processing III-nitride wavelength-scale photonic structures and devices. E-beam lithography patterning and plasma dry etching to create wavelength-scale photonic structures and devices will be studied. Unique properties of III-nitrides make them very attractive for the generation, guiding, and switching of light, and new architectures for integrating III-nitride photonic components (e.g., resonators, waveguides, emitters, detectors, etc) onto single chips will be explored to lay the foundation for achieving integrated photonic circuits based on III-nitrides for a wide range of ap-plications. 3) Deep UV time-resolved nano-optical studies. A specially designed deep UV pico-second time-resolved nano-optical spectroscopy system will be used for probing optical proper-ties [photoluminescence (PL), electro-luminescence (EL), etc.] of semiconductor materials and photonic devices with time-resolution of a few ps, spatial resolution of 50 nm, and wavelength range spanning from IR to deep UV (to 195 nm). This system integrates a deep UV femtosecond laser spectroscopy system with a deep UV near-field-scanning-optical-microscopy (NSOM)/AFM system. It will be utilized to probe carrier dynamics, optical transitions, as well as defect properties in nitride materials and QWs, especially in AlGaN alloys, GaN/AlGaN and GaN/InAlGaN QWs with high Al content (x0.5). The aim is to gain new understanding and methods of controlling optical and optoelectronic properties. The emission and light propagation properties in wavelength-scale emitters and waveguides will also be investigated to provide input for improved integrated photonic device design. %%% The project addresses fundamental research issues in a topical area of electronic/photonic materi-als science having high technological relevance. An important feature of the project is the strong emphasis on education, and the integration of research and education. Through direct involve-ment in research, students will have unique learning and discovery opportunities in the areas of advanced semiconductor materials, nano-fabrication techniques, semiconductor physics, semi-conductor materials fabrication and device processing using state-of-the-art epitaxial growth, lithographic patterning, plasma etching, and advanced materials characterization. The project also encompasses development of strategic alliances with industry, which further enhances edu-cation and training opportunities for postdoctorals, graduate, and undergraduate students.***

该项目追求几个相互联系的研究领域：1）优化III氮化物材料质量； n-和p型掺杂，特别是针对艾尔根三元合金和含有较高含量含量的Inalgan Quaternary alloys（x 0.5）；以及脱位和线缺陷的减少。当采用亚微米串横向外延过度生长时，台面边缘的过量应变松弛可能会占主导地位，从而导致窗户区域上方的脱位较少。还将探索Gan/Inalgan的晶格匹配的第四纪量子井（QWS）作为具有改善性能的紫外线发射器的活性介质。 2）制造和加工III氮化波长尺度光子结构和设备。将研究电子束光刻图案和等离子干蚀刻，以创建波长尺度的光子结构和设备。 III-硝酸盐的独特特性使其对一代，指导和转换的光以及整合III-硝酸盐光子组件的新体系结构（例如，谐振器，波导，发射器，检测器等）都将被探索到单芯片上为基于III二硝酸盐的综合光子电路奠定基础，以进行广泛的AP构图。 3）深紫外线时间分辨的纳米光学研究。专门设计的深紫外线Pico-second time分辨的纳米光谱光谱系统将用于探测半导体材料和光子设备的光发光[光致发光（PL），电致发光（EL）等]少数PS的分辨率，空间分辨率为50 nm，波长范围从IR到深紫外线（至195 nm）。该系统将深紫外线飞秒激光光谱系统与深紫外线近距离扫描 - 光学微镜（NSOM）/AFM系统集成。它将用于探测载体动力学，光学跃迁以及氮化物材料和QW中的缺陷特性，尤其是在Algan合金中，GAN/Algan和Gan/inalgan QWS含量很高（x0.5）。目的是获得控制光学和光电特性的新理解和方法。还将研究波长尺度发射器和波导中的发射和光传播特性，以提供改进的集成光子设备设计的输入。 %%％该项目解决了具有高技术相关性的电子/光子材料科学主题领域的基本研究问题。该项目的一个重要特征是对教育以及研究和教育的融合非常重视。通过直接参与研究，学生将在先进的半导体材料，纳米制作技术，半导体物理学，半导体材料制造和设备处理的领域中拥有独特的学习和发现机会，光刻图案，等离子体蚀刻和高级材料表征。该项目还涵盖了与行业的战略联盟的发展，这进一步增强了博士后，研究生和本科生的教育和培训机会。***