Layer-Structured Semiconductor Alloys: Growth, Characterization, and Applications

层状结构半导体合金：生长、表征和应用

• 批准号: 1206652
• 负责人: Jingyu Lin
• 金额: $ 45万
• 依托单位: Texas Tech University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-05-01 至 2015-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1206652&HistoricalAwards=false
• 关键词: Layer; Structured; Semiconductor; Alloys; Growth

Technical Description: This research project is to investigate layer-structured (BN)x(C2)1-x semiconductor alloys with an emphasis on materials growth by metal organic chemical vapor deposition, basic material properties studies, and exploration of potential applications. (BN)x(C2)1-x semiconductor alloys represent a unique material system for exploring the evolution of optical properties from far infrared to deep ultraviolet and transport properties from insulator to semi-metal in the same crystal structure. Research tasks include the probe of fundamental optical and electrical properties such as the energy bandgap and its variation with temperature and alloy composition, free, bound, and localized exciton transitions, impurity energy levels, feasibility of n- and p-type conductivity control, and carrier transport properties.Non-technical Description: The project trains postdoctoral researchers, graduate and undergraduate students in the areas of novel materials growth, characterization, nano-fabrication techniques and material/device processing using the state-of-the-art facilities. (BN)x(C2)1-x material system has the potential to complement nitride wide-bandgap semiconductors and carbon based nanostructured materials and enable the realization of chip-scale multi-spectral light sources and detectors and full spectral multi-junction solar cells. Ultimately, the materials developed could have a major impact on energy, medical, security, and communication.

技术描述：该研究项目旨在研究层状结构（BN）x（C2）1-x半导体合金，重点是金属有机化学气相沉积材料的生长、基本材料性能研究以及潜在应用的探索。 (BN)x(C2)1-x半导体合金代表了一种独特的材料系统，用于探索同一晶体结构中从远红外到深紫外的光学特性的演变以及从绝缘体到半金属的传输特性。研究任务包括探索基本的光学和电学特性，例如能带隙及其随温度和合金成分的变化、自由、束缚和局域激子跃迁、杂质能级、n型和p型电导率控制的可行性，以及非技术描述：该项目使用最先进的设施，在新型材料生长、表征、纳米制造技术和材料/器件加工领域培训博士后研究人员、研究生和本科生。 (BN)x(C2)1-x材料体系具有补充氮化物宽带隙半导体和碳基纳米结构材料的潜力，可实现芯片级多光谱光源和探测器以及全光谱多结太阳能电池。最终，开发的材料可能会对能源、医疗、安全和通信产生重大影响。