Layer-Structured Semiconductor Alloys: Growth, Characterization, and Applications

层状结构半导体合金：生长、表征和应用

• 批准号: 1206652
• 负责人: Jingyu Lin
• 金额: $ 45万
• 依托单位: Texas Tech University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-05-01 至 2015-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1206652&HistoricalAwards=false
• 关键词: Layer; Structured; Semiconductor; Alloys; Growth

Technical Description: This research project is to investigate layer-structured (BN)x(C2)1-x semiconductor alloys with an emphasis on materials growth by metal organic chemical vapor deposition, basic material properties studies, and exploration of potential applications. (BN)x(C2)1-x semiconductor alloys represent a unique material system for exploring the evolution of optical properties from far infrared to deep ultraviolet and transport properties from insulator to semi-metal in the same crystal structure. Research tasks include the probe of fundamental optical and electrical properties such as the energy bandgap and its variation with temperature and alloy composition, free, bound, and localized exciton transitions, impurity energy levels, feasibility of n- and p-type conductivity control, and carrier transport properties.Non-technical Description: The project trains postdoctoral researchers, graduate and undergraduate students in the areas of novel materials growth, characterization, nano-fabrication techniques and material/device processing using the state-of-the-art facilities. (BN)x(C2)1-x material system has the potential to complement nitride wide-bandgap semiconductors and carbon based nanostructured materials and enable the realization of chip-scale multi-spectral light sources and detectors and full spectral multi-junction solar cells. Ultimately, the materials developed could have a major impact on energy, medical, security, and communication.

技术描述：该研究项目是为了研究层结构化（BN）X（C2）1-X半导体合金，重点是通过金属有机化学化学蒸气沉积，基本材料特性研究和对潜在应用的探索来强调材料的生长。 （BN）X（C2）1-X半导体合金代表了一种独特的材料系统，用于探索光学特性从远红外到深紫外线的演变，并在相同的晶体结构中从绝缘体到半金属的传输性能。研究任务包括基本光学和电气特性的探测，例如能量带隙及其与温度和合金组成的变化，自由，界限和局部激子过渡，杂质能量水平，N-和P型电导率控制的可行性，以及载体运输属性。使用最先进的设施进行表征，纳米制作技术和材料/设备处理。 （BN）X（C2）1-X材料系统具有补充氮化物宽带半导体和基于碳的纳米结构材料的潜力，并能够实现芯片尺度的多光谱光源，探测器和全光谱多频谱。最终，开发的材料可能会对能源，医疗，安全和通信产生重大影响。