Dynamics of Fundamental Optical Transitions in Gallium Nitride and Aluminum Gallium Nitride

氮化镓和氮化铝镓中基本光学跃迁的动力学

• 批准号: 9528226
• 负责人: Jingyu Lin
• 金额: $ 14.8万
• 依托单位: Kansas State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-05-15 至 2000-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9528226&HistoricalAwards=false
• 关键词: Dynamics; Fundamental; Optical; Transitions; Gallium

9528226 Lin This research project is targeted at the investigation of the dynamics of band-to-band exciton, and band-to-impurity transitions in GaN and AlGaN, including recombination lifetimes and quantum efficiencies, employing time-resolved photoluminescence spectroscopy measurements. These dynamic processes will be investigated in epitaxial layers, heterostructures, quantum wells, and artificially structured laser cavities under different conditions--temperature, excitation energy, intensity, and polarization. Fundamentally important physical quantities, including the free- and bound-exciton oscillator strengths which determine basic optical processes such as excitation, absorption, and recombination, will be measured. The effects of post-growth annealing, external fields, and alloy composition on the optical recombination dynamics will be included in the study. In addition, the dynamics of optical transitions will be investigated under conditions of optically-pumped stimulated emission and lasing to ascertain information regarding preferable optical transitions for laser applications as well as to provide model descriptions for gain mechanisms and quantum efficiencies in GaN lasers. %%% In wide bandgap semiconductor optical devices, such as UV emitters and UV-blue laser diodes, it is the dynamic processes of the fundamental optical transitions that predominantly determine their performance. The history of GaAs and ZnSe semiconductor laser development shows that understanding fundamental optical recombination dynamics is an important key to the understanding of laser activity. Additionally, an understanding of the dynamic processes of optical transitions provides new directions for improving material quality as well as being of great value in designing and optimizing optoelectronic devices. The research will contribute basic materials science knowledge at a fundamental level of technological relevance to several aspects of advanced photonics. Additionally, the knowledge and understandin g gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits used in computing, information processing, and telecommunications by providing a fundamental understanding and a basis for designing and producing improved materials. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

9528226 LIN该研究项目针对的是对带对波段激子的动力学的研究，以及GAN和ALGAN中的带对突发性转变，包括重组的寿命和量子效率，采用时间分辨的光致发光光谱测量值。这些动态过程将在不同条件下的外在层，异质结构，量子孔和人为结构的激光腔中进行研究 - 感应，激发能，强度和极化。将测量从根本上重要的物理量，包括确定基本光学过程（例如激发，吸收和重组）的自由和边界振荡器强度。研究后生长退火，外部场和合金组成对光学重组动态的影响将包括在研究中。 此外，将研究光学转变的动力学，并在光学泵浦的刺激发射和激光的条件下进行研究，以确定有关激光应用的优选光学转变的信息，并为GAN激光器中的增益机制和量子效率提供模型描述。在宽带gap半导体光学设备（例如紫外线发射器和紫外线激光二极管）中，%%％的动态过程主要决定了它们的性能。 GAA和ZNSE半导体激光发展的历史表明，了解基本的光学重组动力学是理解激光活性的重要关键。 此外，对光学过渡的动态过程的理解为改善材料质量以及在设计和优化光电设备方面具有巨大价值提供了新的方向。这项研究将以基本材料的科学知识在技术相关性的基本水平上为高级光子学的几个方面提供了帮助。 此外，从该研究项目中获得的知识和理解预计将以一般的方式做出贡献，以改善用于计算，信息处理和电信的高级设备和电路的性能，通过提供基本的理解以及设计和生产的基础改进的材料。 该计划的一个重要特征是通过培训学生在根本和技术意义上的领域中培训研究和教育。 ***