Excitonic recombination processes in III-nitride quantum wells

III 族氮化物量子阱中的激子复合过程

• 批准号: 392680433
• 负责人: Professor Dr. Andreas Hangleiter
• 金额: --
• 依托单位: Institut für Angewandte Physik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2017
• 资助国家: 德国
• 起止时间: 2016-12-31 至 2021-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/392680433?language=en
• 关键词: Excitonic; recombination; processes; III; nitride

Today, group-III-nitrides technologically represent a highly sophisticated example of wide-gap semiconductors. Together with the large bandgap there are further outstanding properties, in particular large effective masses for electrons and holes as well as a small dielectric constant. As an immediate consequence, a strong electron-hole interaction emerges leading to large exciton binding energies, most prominently in low-dimensional structures. For most semiconductors, excitons are regarded a low-temperature phenomenon owing to their small binding energy. In contrast, the large exciton binding energy in III-nitride quantum wells makes one expect a large fraction of excitons even at room temperature. In the present project the consequences of exciton formation on recombination processes, including both radiative and nonradiative recombination, shall be studied. We expect dramatic changes of the ecombination kinetics combined with strongly increased recombination probabilities. In addition, a strong impact of exciton formation on the temperature dependence is anticipated. Experimentally, systematic studies of the recombination kinetics as a function of carrier density and temperature shall be performed, inorder to clarify the influence of the electron-hole interaction on both radiative and nonradiative processes. A systematic variation of composition, structure, doping, and crystallographic orientation is planned to study the influence of varying exciton binding energies. The experimental efforts shall be complemented by model calculations focused on the excitonic enhancement of recombination processes. The influence of excitons on recombination processes may have considerable impact on the properties of III-nitride lightemitting diodes. There, one observes the "droop" phenomenon, i.e. a strong decrease of the quantum efficiency at large current densities. An unambiguous proof of excitonic enhancement of recombination processes may shed new light onto these phenomena. Moreover, new strategies to overcome the droop may evolve from a deeper understanding.

如今，III-nitrides从技术上讲是宽距离半导体的高度复杂示例。与大型带隙一起，还具有进一步的出色特性，特别是电子和孔的有效质量以及一个小的介电常数。直接的结果，强烈的电子孔相互作用出现导致大型激子结合能，在低维结构中最为突出。对于大多数半导体，由于其小结合能，激子被认为是低温现象。相比之下，III氮化物量子井中的大型激子结合能使即使在室温下也期望大部分激子。在本项目中，应研究激子形成对重组过程的后果，包括辐射和非辐射重组。我们预计，结合动力学的急剧变化以及重组概率的强烈增加。另外，预计激子形成对温度依赖性的强烈影响。在实验上，应按阶层进行重组动力学与载体密度和温度的函数的系统研究，以阐明电子孔相互作用对辐射和非辐射过程的影响。计划对组成，结构，掺杂和晶体学取向的系统变化，以研究不同激子结合能的影响。实验努力应通过重新组合过程的兴奋性增强的模型计算来补充。激子对重组过程的影响可能会对III氮化二极管二极管的特性产生相当大的影响。在那里，人们观察到“下垂”现象，即大电流密度下量子效率的强烈降低。重新组合过程的兴奋性增强的明确证明可能会给这些现象带来新的光。此外，克服下垂的新策略可能会从更深入的理解中发展。

项目成果

Recombination dynamics in GaInN/GaN quantum wells

• DOI: 10.1088/1361-6641/ab2788
• 发表时间: 2019-06
• 期刊: Semiconductor Science and Technology
• 影响因子: 1.9
• 作者: A. Hangleiter

Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions

稳态条件下GaInN/GaN量子阱的低温内量子效率

• DOI: 10.1088/1361-6641/ac4b89
• 发表时间: 2022
• 期刊: Semiconductor Science and Technology
• 影响因子: 1.9
• 作者: S. Sidikejiang;P. Henning;P. Horenburg;H. Bremers;U. Rossow;D. Menzel;A. Hangleiter
• 通讯作者: A. Hangleiter

Internal quantum efficiency of nitride light emitters: a critical perspective

• DOI: 10.1117/12.2290082
• 发表时间: 2018-02
• 作者: A. Hangleiter;T. Langer;P. Henning;Fedor Alexej Ketzer;H. Bremers;U. Rossow

Unity quantum efficiency in III-nitride quantum wells at low temperature: Experimental verification by time-resolved photoluminescence

• DOI: 10.1063/5.0055368
• 发表时间: 2021-07-05
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Henning, Philipp;Sidikejiang, Shawutijiang;Hangleiter, Andreas
• 通讯作者: Hangleiter, Andreas

Reduced nonradiative recombination in semipolar green-emitting III-N quantum wells with strain-reducing AlInN buffer layers

使用减少应变的 AlInN 缓冲层减少半极性绿光发射 III-N 量子阱中的非辐射复合

• DOI: 10.1063/1.5118853
• 发表时间: 2019
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: P. Henning;P. Horenburg;H. Bremers;U. Rossow;F. Tendille;P. Vennegues;P. De Mierry;J. Zuniga-Perez;A. Hangleiter
• 通讯作者: A. Hangleiter