Growth of Gallium Nitride and Related Materials at Subatmospheric Pressures

氮化镓及相关材料在低于大气压下的生长

• 批准号: 9901419
• 负责人: John Angus
• 金额: $ 39.47万
• 依托单位: Case Western Reserve University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-07-01 至 2003-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9901419&HistoricalAwards=false
• 关键词: Growth; Gallium; Nitride; Related; Materials

This project addresses new methods for crystallization of the group III nitrides from the melt. Activities include: growth of bulk polycrystalline and single crystal gallium nitride and indium nitride; synthesis of thick and thin film GaN and InN on substrates; and optical, electronic, and structural characterization of the crystals. The aim is to provide an attractive alternative to the current high pressure process for synthesis of bulk group III nitrides; increased understanding of the phase relationships in the group III/nitrogen systems; and further insights into the role of alloying, impurities, defects, and grain boundaries on light emission from the group III nitrides. The approach is to use atomic nitrogen to produce saturated melts of gallium (or indium) from which GaN (or InN) can be crystallized. The decomposition of GaN and InN to the elements is suppressed at low pressures if the crystals are in contact with the nitrogen saturated melt. A main focus of the research will be to achieve stable growth of single crystals and single crystal films through control of temperature and concentration gradients. Horizontal gradient freezing and growth through thin liquid films (a form of liquid phase epitaxy) will be the principal methods employed. Third elements, e.g., In and Sn, will be used to suppress the liquidus temperature and enhance nitrogen solubility. Doping studies will be attempted by including small, controlled amounts of dopants, e.g., Mg and Si, in the original liquid metal. The synthetic work will be complemented by concurrent electrical, optical and structural characterization.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important fabrication aspects of electronic/photonic devices. New experimental materials science and optical tools are now available to allow new approaches which when better understood provide advances in fundamental science and technology. The basic knowledge and understanding gained from the research is expected to contribute to improving the perform-ance of advanced devices and circuits for computing and communications. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area.***

该项目介绍了从熔体中结晶III氮化物结晶的新方法。活动包括：散装多晶和氮化物和氮化淀粉的生长；在基板上合成厚和薄膜gan and Inn；以及晶体的光学，电子和结构表征。目的是为当前的高压过程提供一个有吸引力的替代方法，用于合成大体III氮化体。对III/氮系统组的相位关系的了解增加了；并进一步了解合金，杂质，缺陷和晶界在III组氮化物中发射中的作用。该方法是使用原子氮产生饱和的凝胶熔体（或依赖），可以从中可以从中结晶gan（或Inn）。如果晶体与氮饱和熔体接触，则GAN和INN对元素的分解在低压下被抑制。该研究的主要重点是通过控制温度和浓度梯度来实现单晶和单晶膜的稳定生长。通过稀薄的液体膜（一种形式的液相外延），水平梯度冷冻和生长将是采用的主要方法。例如，将第三个元素（例如在IN和SN）用于抑制液体温度并增强氮溶解度。将尝试在原始液体金属中包括少量的，例如mg和si，尝试使用掺杂研究。综合工作将与并发的电气，光学和结构表征相辅相成。%%% %%;在具有很高潜在技术相关性的材料科学领域的基础研究问题上解决了基础研究问题。该研究将在基本层面上为电子/光子设备的重要制造方面提供基础材料的知识。 现在可以使用新的实验材料科学和光学工具来允许新的方法，当更好地理解时，这些方法提供了基本科学和技术的进步。从研究中获得的基本知识和理解预计将有助于提高高级设备和电路的性能进行计算和通信。 该计划的一个重要特征是通过培训学生在根本和技术意义的领域中培训研究和教育。***