Study on molybdenum disulfide layer growth on gallium nitride surface for high efficiency UV-visible photodetector

高效紫外可见光电探测器氮化镓表面二硫化钼层生长研究

• 批准号: 19K05267
• 负责人: カリタ ゴラップ
• 金额: $ 2.25万
• 依托单位: Nagoya Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2019
• 资助国家: 日本
• 起止时间: 2019-04-01 至 2021-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-19K05267/
• 关键词: molybdenum disulfide; gallium nitride; CVD; Heterostructure; 化学気相合成; ファンデルワールヘテロ構造; 紫外可視光検出器

In this research, we proposed to develop molybdenum disulfide (MoS2) and gallium nitride (GaN) heterostructure for short wavelength photodetector applications. In this prospect, we have studied the van der Waal heteroepitaxial growth of MoS2 film by chemical vapor deposition (CVD) method on the GaN surface. Synthesis of MoS2 triangular crystals was achieved on Ga-terminated GaN substrate by the CVD technique using the ammonium tetrathiomolybdate precursor. Growth of triangular crystals on the GaN substrate surface with same orientation was obtained by the CVD process. The growth of triangular crystals with same orientation is due to less lattice mismatched between the MoS2 layer and GaN. Further, the interface quality of the as-synthesized MoS2 crystals and GaN wafer is explored by X-ray photoelectron spectroscopy. A heterojunction device is fabricated with the synthesized MoS2 layer on GaN, showing excellent rectifying diode characteristics and a photovoltaic action with light illumination. This study reveals the suitability of the ammonia-containing ATM precursor for the growth of MoS2 crystals on GaN in the CVD process to obtain a suitable heterostructure for device applications. Again, the developed heterostructure can be significant for application in hydrogen generation considering the catalytic activities of MoS2 layers.

在这项研究中，我们建议开发用于短波长光电探测器应用的二硫化钼（MoS2）和氮化镓（GaN）异质结构。在此背景下，我们研究了采用化学气相沉积（CVD）方法在GaN表面范德华异质外延生长MoS2薄膜。使用四硫代钼酸铵前驱体，通过 CVD 技术在 Ga 端接的 GaN 衬底上合成了 MoS2 三角形晶体。通过CVD工艺在GaN衬底表面生长出同方向的三角形晶体。具有相同取向的三角形晶体的生长是由于MoS2层和GaN之间的晶格失配较少。此外，通过 X 射线光电子能谱研究了合成的 MoS2 晶体和 GaN 晶片的界面质量。用GaN上合成的MoS2层制造异质结器件，表现出优异的整流二极管特性和光照射下的光伏效应。这项研究揭示了含氨 ATM 前驱体适合在 CVD 工艺中在 GaN 上生长 MoS2 晶体，以获得适合器件应用的异质结构。同样，考虑到 MoS2 层的催化活性，所开发的异质结构对于制氢应用具有重要意义。

项目成果

Schottky Junction Properties of Graphene with Nitrogen and Gallium Polar Freestanding GaN

石墨烯与氮和镓极性独立式 GaN 的肖特基结特性

• DOI: 10.1109/nano46743.2019.8993910
• 发表时间: 2019
• 期刊: Proceeding of IEEE Nano 2019
• 作者: A. Ranade,R. Mahyavanshi;P. Desai;M. Tanemura;G. Kalita
• 通讯作者: G. Kalita

Formation of Effective CuI‐GaN Heterojunction with Excellent Ultraviolet Photoresponsive Photovoltage

• DOI: 10.1002/pssa.201900200
• 发表时间: 2019-07
• 期刊: physica status solidi (a)
• 作者: A. Ranade;P. Desai;R. Mahyavanshi;M. Tanemura;G. Kalita

Materials and devices for clean and green energy technologies

清洁和绿色能源技术的材料和器件

• 发表时间: 2020
• 作者: P. Desai;B. Todankar;M. Shinde;A. K. Ranade;M. E. Ayhan;M. Kondo;T. Dewa;M. Tanemura;G. Kalita;G. Kalita
• 通讯作者: G. Kalita

In situ surface modification of bulk or nano materials by cytochrome-c for active hydrogen evolution catalysis

• DOI: 10.1039/d0qm00627k
• 发表时间: 2021
• 期刊: Materials Chemistry Frontiers
• 影响因子: 7
• 作者: P. Thakur;Jamsad Mannuthodikayil;G. Kalita;K. Mandal;T. N. Narayanan

Fabrication of heterostructure with MoS2 layers and GaN for photoresponsive device application

用于光响应器件应用的 MoS2 层和 GaN 异质结构的制造

• 发表时间: 2019
• 作者: P. N. Desai;A. K. Ranade;M. Shinde;B. Todankar;R. D. Mahyavanshi;M. Tanemura;G. Kalita
• 通讯作者: G. Kalita