Study on molybdenum disulfide layer growth on gallium nitride surface for high efficiency UV-visible photodetector

高效紫外可见光电探测器氮化镓表面二硫化钼层生长研究

• 批准号: 19K05267
• 负责人: カリタ ゴラップ
• 金额: $ 2.25万
• 依托单位: Nagoya Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2019
• 资助国家: 日本
• 起止时间: 2019-04-01 至 2021-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-19K05267/
• 关键词: molybdenum disulfide; gallium nitride; CVD; Heterostructure; 化学気相合成; ファンデルワールヘテロ構造; 紫外可視光検出器

In this research, we proposed to develop molybdenum disulfide (MoS2) and gallium nitride (GaN) heterostructure for short wavelength photodetector applications. In this prospect, we have studied the van der Waal heteroepitaxial growth of MoS2 film by chemical vapor deposition (CVD) method on the GaN surface. Synthesis of MoS2 triangular crystals was achieved on Ga-terminated GaN substrate by the CVD technique using the ammonium tetrathiomolybdate precursor. Growth of triangular crystals on the GaN substrate surface with same orientation was obtained by the CVD process. The growth of triangular crystals with same orientation is due to less lattice mismatched between the MoS2 layer and GaN. Further, the interface quality of the as-synthesized MoS2 crystals and GaN wafer is explored by X-ray photoelectron spectroscopy. A heterojunction device is fabricated with the synthesized MoS2 layer on GaN, showing excellent rectifying diode characteristics and a photovoltaic action with light illumination. This study reveals the suitability of the ammonia-containing ATM precursor for the growth of MoS2 crystals on GaN in the CVD process to obtain a suitable heterostructure for device applications. Again, the developed heterostructure can be significant for application in hydrogen generation considering the catalytic activities of MoS2 layers.

在这项研究中，我们提议开发二硫化钼（MOS2）和氮化壳（GAN）异质结构，以用于短波长光电探测器应用。在这一前景中，我们研究了通过化学蒸气沉积（CVD）方法在GAN表面上的MOS2膜的范德华杂膜生长。使用Tetrathiomelybdate前体的CVD技术，通过CVD技术实现MOS2三角形晶体的合成。通过CVD过程获得了带有相同方向的GAN底物表面上三角形晶体的生长。三角形晶体具有相同方向的生长是由于MOS2层和GAN之间的晶格不匹配较少。此外，X射线光电子光谱探索了AS合成MOS2晶体和GAN晶圆的界面质量。使用GAN上的合成MOS2层制造了异质结构设备，显示出极好的整流二极管特性和带有光照明的光伏作用。这项研究揭示了含氨的ATM前体对CVD工艺中GAN上MOS2晶体生长的适用性，以获得用于设备应用的合适异质结构。同样，考虑到MOS2层的催化活性，开发的异质结构对于在氢生成中的应用可能很重要。

项目成果

Schottky Junction Properties of Graphene with Nitrogen and Gallium Polar Freestanding GaN

石墨烯与氮和镓极性独立式 GaN 的肖特基结特性

• DOI: 10.1109/nano46743.2019.8993910
• 发表时间: 2019
• 期刊: Proceeding of IEEE Nano 2019
• 作者: A. Ranade,R. Mahyavanshi;P. Desai;M. Tanemura;G. Kalita
• 通讯作者: G. Kalita

Formation of Effective CuI‐GaN Heterojunction with Excellent Ultraviolet Photoresponsive Photovoltage

• DOI: 10.1002/pssa.201900200
• 发表时间: 2019-07
• 期刊: physica status solidi (a)
• 作者: A. Ranade;P. Desai;R. Mahyavanshi;M. Tanemura;G. Kalita

Materials and devices for clean and green energy technologies

清洁和绿色能源技术的材料和器件

• 发表时间: 2020
• 作者: P. Desai;B. Todankar;M. Shinde;A. K. Ranade;M. E. Ayhan;M. Kondo;T. Dewa;M. Tanemura;G. Kalita;G. Kalita
• 通讯作者: G. Kalita

In situ surface modification of bulk or nano materials by cytochrome-c for active hydrogen evolution catalysis

• DOI: 10.1039/d0qm00627k
• 发表时间: 2021
• 期刊: Materials Chemistry Frontiers
• 影响因子: 7
• 作者: P. Thakur;Jamsad Mannuthodikayil;G. Kalita;K. Mandal;T. N. Narayanan

Fabrication of heterostructure with MoS2 layers and GaN for photoresponsive device application

用于光响应器件应用的 MoS2 层和 GaN 异质结构的制造

• 发表时间: 2019
• 作者: P. N. Desai;A. K. Ranade;M. Shinde;B. Todankar;R. D. Mahyavanshi;M. Tanemura;G. Kalita
• 通讯作者: G. Kalita