3D Integration of Nonvolatile Nanomagnetic Logic

非易失性纳米磁性逻辑的 3D 集成

基本信息

批准号：
114933698
负责人：
Professorin Dr. Doris Schmitt-Landsiedel
金额：
--
依托单位：
Lehrstuhl für Nano- und Quantensensorik
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2009
资助国家：
德国
起止时间：
2008-12-31 至 2015-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/114933698?language=en
关键词：
3D Integration Nonvolatile Nanomagnetic Logic

项目摘要

Magnetic field-coupling is an emerging, new paradigm of nanoscale computing, where information is propagated and processed by the magnetic interaction of single-domain magnetic particles. The feasibility of this concept has been recently demonstrated experimentally by a magnetic majority gate, which was lithographically fabricated from Permalloy dots. We have shown theoretically that magnetic field-coupled circuits can achieve fast and densely integrated computing which dissipates only few kT power per switching.Our goal is the design and experimental demonstration of field coupled circuits, which are based on ion-beam patterned magnetic multilayers. Such multilayers exhibit strong out-ofplane anisotropy, which is very desirable from the architectural point of view, and the magnetic properties of the layers / dots can be fine-tuned and improved by ion irradiation. Magnetic characteristics of the dots are well-controlled, which makes the realization of complex field-coupled structures feasible.We are going to realize not only a stand-alone device, but a small, albeit complete magnetic computing system. We put special focus on the design and fabrication of electrical inputs / outputs and an integrated clocking system. Submicron-scale electrical wires, buried under the magnetic layers will provide clocking fields for synchronized switching of magnets.Our research could result in a new family of magnetoelectronic devices with far-reaching application potential in low-power computing. The fabrication of magnetic computing components is compatible with silicon technologies and they can enhance the functionality of microelectronic devices.

磁场耦合是一种新兴的纳米级计算范例，其中信息通过单域磁性粒子的磁相互作用进行传播和处理。这一概念的可行性最近已通过磁性多数栅极（由坡莫合金点光刻制造）得到了实验证明。我们从理论上证明，磁场耦合电路可以实现快速、密集的集成计算，每次切换仅消耗几 kT 的功率。我们的目标是基于离子束图案化磁性多层的场耦合电路的设计和实验演示。这种多层表现出很强的面外各向异性，从结构的角度来看这是非常理想的，并且层/点的磁性能可以通过离子辐照进行微调和改善。点的磁性特性得到很好的控制，这使得复杂的场耦合结构的实现成为可能。我们不仅要实现一个独立的设备，而且要实现一个小型但完整的磁计算系统。我们特别关注电气输入/输出和集成时钟系统的设计和制造。埋在磁性层下的亚微米级电线将为磁体的同步开关提供时钟场。我们的研究可能会产生一系列新的磁电子器件，在低功耗计算领域具有深远的应用潜力。磁性计算组件的制造与硅技术兼容，可以增强微电子设备的功能。