3D Integration of Nonvolatile Nanomagnetic Logic

非易失性纳米磁性逻辑的 3D 集成

基本信息

批准号：
114933698
负责人：
Professorin Dr. Doris Schmitt-Landsiedel
金额：
--
依托单位：
Lehrstuhl für Nano- und Quantensensorik
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2009
资助国家：
德国
起止时间：
2008-12-31 至 2015-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/114933698?language=en
关键词：
3D Integration Nonvolatile Nanomagnetic Logic

项目摘要

Magnetic field-coupling is an emerging, new paradigm of nanoscale computing, where information is propagated and processed by the magnetic interaction of single-domain magnetic particles. The feasibility of this concept has been recently demonstrated experimentally by a magnetic majority gate, which was lithographically fabricated from Permalloy dots. We have shown theoretically that magnetic field-coupled circuits can achieve fast and densely integrated computing which dissipates only few kT power per switching.Our goal is the design and experimental demonstration of field coupled circuits, which are based on ion-beam patterned magnetic multilayers. Such multilayers exhibit strong out-ofplane anisotropy, which is very desirable from the architectural point of view, and the magnetic properties of the layers / dots can be fine-tuned and improved by ion irradiation. Magnetic characteristics of the dots are well-controlled, which makes the realization of complex field-coupled structures feasible.We are going to realize not only a stand-alone device, but a small, albeit complete magnetic computing system. We put special focus on the design and fabrication of electrical inputs / outputs and an integrated clocking system. Submicron-scale electrical wires, buried under the magnetic layers will provide clocking fields for synchronized switching of magnets.Our research could result in a new family of magnetoelectronic devices with far-reaching application potential in low-power computing. The fabrication of magnetic computing components is compatible with silicon technologies and they can enhance the functionality of microelectronic devices.

磁场耦合是一种新兴的纳米级计算的新范式，其中信息通过单域磁性颗粒的磁相互作用而传播和处理。该概念的可行性最近已通过磁性多数门实验证明，该门是用Permalloy Dots捏造的。从理论上讲，我们已经证明了磁场耦合电路可以实现快速且密集的积分计算，从而消散了每次开关的KT功率很少。我们的目标是基于离子梁图案化的磁性多层的设计和实验证明。从建筑的角度来看，这种多层具有强大的外部各向异性，并且可以通过离子照射对层 /点的磁性进行微调和改进。点的磁性特性是良好的控制，这使得相复杂的场耦合结构的实现可行。我们不仅要实现独立的设备，而且还会实现一个小的，尽管是一个完整的磁计算系统。我们特别关注电气输入 /输出和集成时钟系统的设计和制造。埋在磁性层下的亚微米尺度电线将为磁铁的同步开关提供时钟场。我们的研究可能会导致新的磁电机家族在低功率计算中具有深远的应用程序潜力。磁计算组件的制造与硅技术兼容，它们可以增强微电器设备的功能。