CAREER: Native Oxides on the III-V Nitrides and Chemical Cleaning of the Semiconductor Surfaces

职业：III-V 族氮化物上的天然氧化物和半导体表面的化学清洗

• 批准号: 9624995
• 负责人: Suzanne Mohney
• 金额: $ 40.62万
• 依托单位: Pennsylvania State Univ University Park
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-05-15 至 2002-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9624995&HistoricalAwards=false
• 关键词: CAREER; Native; Oxides; III; Nitrides

9624995 Mohney This CAREER research project addresses the formation and the chemical etching of native oxides on III-V nitride surfaces. The chemical and structural nature of intentionally and unintentionally formed oxides on the semiconductor surfaces will be studied, and chemical processing steps for the preparation of semiconductor surfaces for further devic e processing will be developed. Complementary techniques including spectroscopic ellipsometry, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and conventional and high resolution transmission electron microscopy will be employed. The nature of the oxide, which is currently unknown, will strongly influence which chemical etchants w ill be most effective for removing it. Appropriate chemical treatments for removing the oxide and producing surfaces with the least residual oxygen and carbon contamination will be developed, given that many processing steps, such as the formation of ohmic contacts and Schottky barriers, are most conveniently accomplished when a brief exposure to air is allowed between chemical preparation and further processing. Comparison of the effectiveness of the chemical surface preparation procedures will be accomplished through the fabrication and characterization of non-reactive ohmic contacts and/or Schottky barriers to GaN. %%% Along with the basic research activity, this project incorporates material on surface preparation of semiconductors into an undergraduate laboratory course on electronic and photonic materials. Other educational initiatives to be undertaken include updating a senior-level laboratory course on metals science and engineering, increasing the use of c omputer modeling and visualization in the undergraduate curriculum, and increasing participation of undergraduates in research. The proposed basic investigations are expected to contribute fundamental materials science knowledge of technological relevance to advanced microelectronic devices and circuits. The knowledge and understanding gained fro m this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits used in computing, information processing, and telecommunications by providing a fundamental understanding and a basis for designing and producing improved materials and processes. *** _

9624995 Mohney 该职业研究项目致力于解决 III-V 族氮化物表面上原生氧化物的形成和化学蚀刻问题。 将研究半导体表面上有意和无意形成的氧化物的化学和结构性质，并将开发用于为进一步器件加工准备半导体表面的化学加工步骤。 将采用光谱椭圆光度术、俄歇电子能谱、X射线光电子能谱以及传统和高分辨率透射电子显微镜等补充技术。目前尚不清楚氧化物的性质，它将强烈影响哪种化学蚀刻剂能够最有效地去除它。鉴于许多处理步骤（例如欧姆接触和肖特基势垒的形成）在短暂暴露于空气时最方便地完成，因此将开发用于去除氧化物并产生残留氧和碳污染最少的表面的适当化学处理。允许在化学制备和进一步加工之间进行。 化学表面处理程序的有效性比较将通过非反应性欧姆接触和/或 GaN 肖特基势垒的制造和表征来完成。 %%% 除了基础研究活动外，该项目还将半导体表面处理材料纳入电子和光子材料本科实验室课程中。将采取的其他教育举措包括更新金属科学与工程高级实验室课程、在本科课程中增加计算机建模和可视化的使用以及增加本科生对研究的参与。拟议的基础研究预计将贡献与先进微电子器件和电路技术相关的基础材料科学知识。 从该研究项目中获得的知识和理解预计将通过为设计和生产改进材料提供基本理解和基础，总体上有助于提高计算、信息处理和电信中使用的先进设备和电路的性能和流程。 ***_