NSF-BSF: New Approaches to Contacts to 2D Semiconductors

NSF-BSF：二维半导体接触新方法

• 批准号: 2227346
• 负责人: Suzanne Mohney
• 金额: $ 41万
• 依托单位: Pennsylvania State Univ University Park
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-09-15 至 2025-08-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2227346&HistoricalAwards=false
• 关键词: NSF; BSF; New; Approaches; Contacts

NEW APPROACHES FOR ELECTRICAL CONTACTS TO SEMICONDUCTING TRANSITION METAL DICHALCOGENIDES New semiconductors such as two-dimensional transition metal dichalcogenides have great potential to advance energy-efficient electronics and satisfy future high computational workloads. However, the electrical resistance for current to flow through transistors fabricated from these semiconductors still limits the performance of devices and circuits. Therefore, researchers at The Pennsylvania State University, in collaboration with counterparts at Technion–Israel Institute of Technology, will exploit complementary expertise to gain fundamental insight into electrical contacts to two-dimensional semiconductors. The insights they gain from testing hypotheses about the origins of contact resistance will allow them to engineer contacts with ultra-low resistance. This project will train graduate and undergraduate students by involving them in research relevant to industry and leading laboratories around the world. The principal investigators will engage in exchange visits for intensive planning and outreach activities to student groups, including outreach to undergraduate honors students at The Pennsylvania State University and middle school girls. Through their own exchange visits, students will gain hands-on experience in complementary research techniques and a global perspective on research. The project will have scientific and technological impact in the fields of semiconductor devices and two-dimensional materials. Considering the advantages and diverse functionality afforded by two-dimensional semiconductors, they have the potential for enormous economic impact through integration with existing, ubiquitous silicon technology. Other technologies that may be impacted include transparent displays and flexible electronics.Two-dimensional semiconductors based on transition metal dichalcogenides are ideally suited for short-channel transistors and energy-efficient logic devices that can be integrated in a monolithic three-dimensional fashion or used for flexible electronics. Yet one of the key challenges to advancing this technology is contacting the semiconductors with low resistance. Moreover, the metal/semiconductor interface plays a crucial role in determining the carrier type in the channel of the transistor. Researchers at The Pennsylvania State University and Technion–Israel Institute of Technology will test hypotheses on the role of metal deposition, use of semimetals, and junction formation on the resistance of contacts to atomically thin semiconductors. They will perform experiments to separate the confounding effects of key variables to gain deeper insight into the metal/semiconductor interface. Their work to elucidate the physics of contacts will be aided by materials discovery of new semimetals. The Pennsylvania State University will exploit decades of experience studying interfacial reactions at contact interfaces, materials characterization, and thin-film synthesis. At the Technion, research will build upon recent insights on current transport in two-dimensional semiconductor devices, including the design of specialized test structures to pinpoint the origin of the components of resistance. By combining these strengths, the team will develop a deeper understanding of Fermi-level pinning in contacts to two-dimensional semiconductors and how to engineer contacts with unprecedented low contact resistances.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

半导体过渡金属二硫族化物电接触的新方法二维过渡金属二硫族化物等新型半导体在推进节能电子学和满足未来高计算工作量方面具有巨大潜力，然而，电流流经由这些材料制成的晶体管时存在电阻问题。因此，宾夕法尼亚州立大学的研究人员与同事合作。以色列理工学院将利用互补的专业知识来获得对二维半导体电接触的基本见解，他们从测试接触电阻起源的假设中获得的见解将使他们能够设计出具有超低电阻的接触。该项目将通过让研究生和本科生参与与行业和世界各地领先实验室相关的研究来培训他们。主要研究人员将进行交流访问，以对学生团体进行深入的规划和推广活动，包括对宾夕法尼亚州立大学的本科荣誉学生进行推广。通过自己的大学和中学女生。通过交流访问，学生将获得互补研究技术的实践经验和全球研究视角，考虑到两者所提供的优势和多样化功能，该项目将对半导体器件和二维材料领域产生科学和技术影响。二维半导体，通过与现有的、普遍存在的硅技术集成，可能会产生巨大的经济影响。其他可能受到影响的技术包括透明显示器和柔性电子产品。基于过渡金属二硫属化物的二维半导体非常适合短沟道。晶体管和能够以单片三维方式集成或用于柔性电子器件的节能逻辑器件然而，推进该技术的关键挑战之一是低电阻接触半导体。此外，金属/半导体界面起着至关重要的作用。宾夕法尼亚州立大学和以色列理工学院的研究人员将测试金属沉积、半金属的使用以及结形成对接触原子电阻的影响的假设。他们将进行实验来分离关键变量的混杂效应，以更深入地了解金属/半导体界面，宾夕法尼亚州立大学将利用新的半金属材料的发现来帮助他们阐明接触的物理原理。以色列理工学院拥有数十年研究接触界面反应、材料表征和薄膜合成的经验，研究将建立在对二维半导体器件电流传输的最新见解的基础上，包括设计专门的测试结构来精确定位。通过结合这些优势，该团队将对二维半导体接触中的费米级钉扎以及如何设计具有前所未有的低接触电阻的接触有更深入的了解。该奖项反映了 NSF 的法定使命和使命。通过使用基金会的智力价值和更广泛的影响审查标准进行评估，该项目被认为值得支持。