Contacts to Layered Dichalcogenide Semiconductors

与层状二硫属化物半导体的接触

• 批准号: 1410334
• 负责人: Suzanne Mohney
• 金额: $ 33.6万
• 依托单位: Pennsylvania State Univ University Park
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-07-15 至 2019-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1410334&HistoricalAwards=false
• 关键词: Contacts; Layered; Dichalcogenide; Semiconductors

Non-technical Description: Two-dimensional layered semiconductors have recently captured the imagination of scientists and engineers because of their unusual physical properties and potential for many applications. For example, transistors fabricated from these materials could be used in consumer electronics; photovoltaics derived from the materials could offer greater energy independence; and molecular sensing using these materials could aid homeland security. To realize the potential of these new materials and use them efficiently in a variety of devices, it is critical to understand and develop electrical contacts that allow current to flow in and out of the devices without significant losses. A graduate student and undergraduate students are receiving direct training in science and engineering research methods as they address this scientific problem. The principal investigator is also gaining experience that informs upper-level material science and engineering courses, as well as outreach activities for underrepresented middle- and high-school students.Technical Description: This project addresses the need for low-resistance Ohmic contacts for two-dimensional layered dichalcogenide semiconductors, including molybdenum disulfide and tantalum diselenide. Investigators are using thermodynamic calculations and phase diagrams to select metal contacts that are likely to exhibit different types of reactions upon annealing. The scenarios for reaction include diffusion of the metal into the semiconductor, substitution of other transition metals for molybdenum or tungsten, and formation of a different layered semiconductor with a different band gap. Such reactions offer the potential to dope the semiconductor or alter the Schottky barrier height at the metal/semiconductor interface, and they could therefore reduce the resistance of the contacts. The reactions are under study using transmission electron microscopy (including aberration-corrected scanning/transmission electron microscopy), which is well suited to detecting changes in the arrangement of atoms at or near the metal/semiconductor interface. Researchers also employ complementary approaches to measure specific contact resistance and gain greater insight into current transport through the contacts. The project contributes to a deeper understanding of contacts to two-dimensional layered dichalcogenide semiconductors and more generally to the science of processing layered materials.

非技术描述：二维层状半导体最近因其不寻常的物理特性和许多应用的潜力而引起了科学家和工程师的想象力。例如，由这些材料制造的晶体管可用于消费电子产品；由这些材料衍生的光伏发电可以提供更大的能源独立性；使用这些材料的分子传感可以帮助国土安全。为了发挥这些新材料的潜力并在各种设备中有效地使用它们，了解和开发允许电流流入和流出设备而不会造成重大损失的电接触至关重要。研究生和本科生在解决这一科学问题时正在接受科学和工程研究方法的直接培训。首席研究员还获得了为高级材料科学和工程课程以及针对代表性不足的初中和高中学生的外展活动提供信息的经验。技术说明：该项目解决了两个低电阻欧姆接触的需求立体层状二硫族化物半导体，包括二硫化钼和二硒化钽。研究人员正在使用热力学计算和相图来选择在退火时可能表现出不同类型反应的金属触点。反应的情况包括金属扩散到半导体中、用其他过渡金属替代钼或钨、以及形成具有不同带隙的不同层状半导体。此类反应提供了掺杂半导体或改变金属/半导体界面处的肖特基势垒高度的潜力，因此可以降低接触的电阻。正在使用透射电子显微镜（包括像差校正扫描/透射电子显微镜）研究这些反应，该显微镜非常适合检测金属/半导体界面处或附近原子排列的变化。研究人员还采用补充方法来测量特定的接触电阻，并更深入地了解通过触点的电流传输。该项目有助于更深入地了解二维层状二硫属化物半导体的接触，更广泛地有助于层状材料加工科学。