Gallium Arsenide Heterostructures by Optical Detection of Pulsed Nuclear Magnetic Resonance

脉冲核磁共振光学检测砷化镓异质结构

• 批准号: 9311913
• 负责人: Erwin Hahn
• 金额: $ 16万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-01-01 至 1996-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9311913&HistoricalAwards=false
• 关键词: Gallium; Arsenide; Heterostructures; Optical; Detection

9311913 Hahn The technique of sensitive optical detection of nuclear magnetic resonance (ODNMR) in semiconductors will be applied to study the properties of gallium arsenide heterostructure and quantum wells. ODNMR measurements will be made of electric fields, Knight shifts, doped constituents, and impurities. A new pulsed and double resonance ODNMR technique will be developed and applied to GaAs heterostructures in order to improve the detection sensitivity and versatility beyond conventional cw ODNMR techniques. The research will focus on the study of spin-spin coupling between photo-induced GaAs surface spin polarization and external spin systems. %%% This research project will develop new techniques involving optical spectroscopy techniques and radio-frequency nuclear magnetic resonance spectroscopy techniques. The relatively weak interaction between a nucleus and a radio-frequency signal is amplified and detected by optical or laser spectroscopy methods. These techniques will be applied to surface atoms on semiconductors. The objective to detect a transfer of magnetism from electrons in the semiconductors to non-semiconductor atoms residing on the semiconductor surface. The results will be of fundamental interest and will provide unique information of potential application in semiconductor technology. ***

9311913 HAHH将应用半导体中核磁共振（ODNMR）的敏感光学检测技术，以研究砷化韧带异质结构和量子井的性质。 ODNMR测量将由电场，骑士移位，掺杂的成分和杂质进行。 将开发一种新的脉冲和双共振ODNMR技术，并应用于GAAS异质结构，以提高检测灵敏度和多功能性，而不是传统的CW ODNMR技术。 这项研究将重点放在光诱导的GAAS表面自旋极化和外部自旋系统之间的自旋旋转耦合的研究。 %% %%该研究项目将开发涉及光谱技术和射频核磁共振光谱技术的新技术。 核与射频信号之间的相对较弱的相互作用被放大并通过光学或激光光谱法检测。 这些技术将应用于半导体上的表面原子。 检测磁性从半导体中的电子转移到位于半导体表面上的非症状的原子的目的。 结果将具有根本的兴趣，并将提供独特的半导体技术应用信息。 ***