Terahertz Emission Spectroscopy of Hot Electron Systems in Semiconductor Heterostructures

半导体异质结构中热电子系统的太赫兹发射光谱

• 批准号: 06452104
• 负责人: HIRAKAWA Kazuhiko
• 金额: $ 2.82万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06452104/
• 关键词: Terahertz light; Far-infrared lingt; semiconductor heterostructure; Plasmon; Hot electron; Garium Arsenide; Ultra short a lifeti photoconductor; Dipole anntena; 遠赤外光; ガリウムム素

Application of strong external electric fields to the high-mobility low dimensional electron systems in semiconductor heterostructures and quantum wire structures results in a rapid rise in electron temperature as well as a drastic reduction of electron mobility. Such "hot carrier" phenomena are one of the most important issues in practical device applications.The combination of a broadband terahertz (THz) detector and a magnetic-field tuned cyclotron resonance filter allows us a unique opportunity for a spectroscopic as well as an absolute intensity analysis of weak THz radiation from semiconductor devices. In this work, we have utilized this technique as a tool for a diagnosis of "hot carrier" phenomena in semiconductors and studied the broadband THz radiation from hot low-dimensional electrons in smiconductor nanostructures. From its spectral line shape the observed broadband THz radiation was identified as the blackbody radiation from the hot electron systems. This fact enabled us to successfully determine the effective blackbody temperature (or the thermodynamic temperature) of the hot electron systems, T_e in a wide temperature range (-5K to-100K) when the lattice temperature was kept at 4.2K.The behavior of T_e is quantitatively explained by a theory of acoustic and optical phonon emission.

在半导体异质结构和量子线结构中，强大的外部电场在高弹性低尺寸电子系统中的应用导致电子温度的迅速升高以及电子迁移率的急剧降低。这种“热载体”现象是实际设备应用中最重要的问题之一。来自半导体设备的弱THZ辐射的强度分析。在这项工作中，我们利用了该技术作为半导体中“热载体”现象的工具，并研究了Smiconductor纳米结构中热的低维电子的宽带THZ辐射。从其光谱线形状，观察到的宽带THZ辐射被确定为来自热电子系统的黑体辐射。这一事实使我们能够成功确定热电子系统的有效黑体温度（或热力学温度），当晶格温度保持在4.2k时，T_E在较宽的温度范围内（-5K TO-100K）。通过声音和光学声子发射理论进行定量解释。

项目成果

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J.J.Heremans：“(311)A GaAs/AlGaAs 异质结中二维空穴系统的迁移率各向异性”应用物理学杂志。

平川一彦: "半導体ナノ構造中のホットな低次元電子系からの遠赤外線放射" 固体物理. (掲載予定). (1996)

Kazuhiko Hirakawa：“半导体纳米结构中热低维电子系统的远红外辐射”固体物理学（待出版）。

平川一彦: "半導体ナノ構造中のホットな低次元電子系からの遠赤外放射" 固体物理. (掲載予定). (1996)

Kazuhiko Hirakawa：“半导体纳米结构中热低维电子系统的远红外辐射”固体物理学（待出版）。

M.Grayson.: "Far infrared emission from hot quasi-one dimensional wires in GaAs" Applied Physics Letters. vol.67. 1564-1566 (1995)

M.Grayson.：“砷化镓中热准一维线的远红外发射”应用物理快报。

K.Hirakawa: "Far infrared emission spectroscopy of hot two-dimensional plasmons in A10.3Gao.7As/GaAs heterojunctions" Applied Physics Letters. vol.67. 2326-2328 (1995)

K.Hirakawa：“A10.3Gao.7As/GaAs 异质结中热二维等离子体激元的远红外发射光谱”应用物理快报。