MSc Compound Semiconductor Electronics (PhD Progression 1+3)

化合物半导体电子学理学硕士（博士升读 1 3）

• 批准号: 2882484
• 金额: --
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2882484
• 关键词: MSc; Compound; Semiconductor; Electronics; PhD

Colloidal Quantum Dot (QD) light-emitting transistors (QLETs) represent an emerging class of QD optoelectronic devices, wherein the electrical switching capability of field-effect transistors (FETs) and the light-generation capability of light-emitting diodes (LEDs) are inherently incorporated in a single device. In contrast to conventional FETs and LEDs, the planar device geometry and the versatile multifunctional nature of QLETs not only endow them with numerous technological opportunities such as wavelength division multiplexing but also render them ideal scientific scaffolds to address the fundamental physical events of charge transport and recombination dynamics. CdSe and PbS QDs have shown remarkable mobilities in FETs, and quantum efficiency in LEDs but their LET performance is poor (external quantum efficiency below<0.002%). In addition, it is essential to get away from toxic elements such as Cd and Pb, and obtain a good light emitting performance before these versatile and solution-processed LETs can be well-integrated into optical communication, display and lighting technologies. In this CDT project, there will be three objectives: Developing QD LETs based on III-VI compound semiconductors (InP). Investigating materials processing, device design and operation parameters for wavelength division multiplexing. Understanding of light and electric-field induced charge transport and exciton dynamics using ultrafast spectroscopy and impedance spectroscopy.

胶体量子点（QD）发光晶体管（QLET）代表了一类新兴的QD光电器件，其中场效应晶体管（FET）的电开关能力和发光二极管（LED）的发光能力固有地合并在单个设备中。与传统的 FET 和 LED 相比，QLET 的平面器件几何形状和多功能特性不仅赋予它们许多技术机会，例如波分复用，而且使它们成为解决电荷传输和复合的基本物理事件的理想科学支架。动力学。 CdSe 和 PbS QD 在 FET 中表现出出色的迁移率，在 LED 中表现出出色的量子效率，但它们的 LET 性能较差（外部量子效率低于 <0.002%）。此外，在这些多功能和溶液处理的LET能够很好地集成到光通信、显示和照明技术中之前，必须远离Cd和Pb等有毒元素，并获得良好的发光性能。在此 CDT 项目中，将实现三个目标： 开发基于 III-VI 族化合物半导体 (InP) 的 QD LET。研究波分复用的材料加工、器件设计和操作参数。使用超快光谱和阻抗光谱了解光和电场引起的电荷传输和激子动力学。