MSc Compound Semiconductor Electronics (PhD Progression 1+3)

化合物半导体电子学理学硕士（博士升读 1 3）

• 批准号: 2882472
• 金额: --
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2882472
• 关键词: MSc; Compound; Semiconductor; Electronics; PhD

High Performance GaN HEMTs are the key components for many applications in communications, radar, sensing, and power applications. This includes high efficiency, high linearity low energy consumption power amplifiers; high gain low noise amplifiers; low loss high isolation switches. This proposed project will be investigation of new epitaxial structures to (i) optimise for multi-platform applications using TCAD techniques; (ii) layout design optimization for high performance at different operating frequencies and applications; (iii) development of fabrication modules to realise integrated devices; and (iv) characterization and modelling to correlate performance improvements to applied improvements. Variety of epitaxial stacks will be used in epitaxial wafers grown and supplied by IQE, this will channel, barrier, and buffer thickness, composition, and structure experiments aiming to enhance electronic properties such as current leakage, efficiency, linearity, switching speed, and gain. The ultimate target would be development of a single epitaxial platform to meet broad range of GaN electronic application operating up to kilovolt regimes and THz frequencies. Proposed items could be investigated in this project.

高性能 GaN HEMT 是通信、雷达、传感和电源应用中许多应用的关键组件。这包括高效率、高线性度低能耗功率放大器；高增益低噪声放大器；低损耗高隔离开关。该拟议项目将研究新的外延结构，以 (i) 使用 TCAD 技术优化多平台应用； (ii) 布局设计优化，以实现不同工作频率和应用下的高性能； (iii) 开发制造模块以实现集成器件； (iv) 表征和建模，将性能改进与应用改进相关联。 IQE 生长和提供的外延晶圆将使用各种外延堆叠，这将进行沟道、势垒和缓冲厚度、成分和结构实验，旨在增强电流泄漏、效率、线性度、开关速度和增益等电子特性。最终目标是开发单一外延平台，以满足运行高达千伏电压和太赫兹频率的广泛 GaN 电子应用。可以在该项目中研究提议的项目。