Optimization of ohmic contact for GaN MMIC Power Amplifier on silicon for Millimetre-wave Applications using Au Free process

使用无金工艺优化用于毫米波应用的硅上 GaN MMIC 功率放大器的欧姆接触

• 批准号: 2265856
• 金额: --
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2265856
• 关键词: Optimization; ohmic; contact; GaN; MMIC

The aim of the proposed project is to develop a gold (Au)free based 250nm T-gate GaN on Si transistor and a power bar demonstrator operating at Ka-Band for 5G applications. The research will mainly be focused on the development of a low-loss HEMT ohmic contact using different plasma process techniques and lithography strategies, and a demonstrator power amplifier design, realised and characterised using on-chip matching techniques. The proposed research topic is of great importance to Si-based foundries and plasma processing tool manufactures, motivated by the need to accommodate a growing microwave & millimetre-wave market. Current RF GaN technology is typically Au based, meaning that Si-based foundries are unable to accommodate process due to the risk of Au contamination / diffusion into Si-based substrates, that alter key properties with catastrophic consequences. This project will be delivered using industry standard design tools, state-of-the-art fabrication tools and techniques and unique industry-based characterisation capabilities.

拟议项目的目标是开发基于无金 (Au) 的 250nm T 栅极 GaN on Si 晶体管和用于 5G 应用的 Ka 频段工作的电源棒演示器。该研究将主要集中于使用不同等离子体工艺技术和光刻策略开发低损耗HEMT欧姆接触，以及使用片上匹配技术实现和表征的演示功率放大器设计。出于适应不断增长的微波和毫米波市场的需要，拟议的研究主题对于硅基铸造厂和等离子体处理工具制造商非常重要。目前的 RF GaN 技术通常是基于 Au 的，这意味着硅基铸造厂无法适应工艺，因为金污染/扩散到硅基衬底中的风险会改变关键特性，带来灾难性后果。该项目将使用行业标准设计工具、最先进的制造工具和技术以及独特的基于行业的表征能力来交付。