Novel Ohmic Contact Technology to P-type and N-type GaN

P 型和 N 型 GaN 的新型欧姆接触技术

基本信息

批准号：
0352942
负责人：
E. Schubert
金额：
$ 8.1万
依托单位：
Rensselaer Polytechnic Institute
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2002
资助国家：
美国
起止时间：
2002-09-04 至 2004-08-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=0352942&HistoricalAwards=false
关键词：
Novel Ohmic Contact Technology type

项目摘要

The specific resistance of ohmic contacts to n- and p-type GaN, AlGaN, and GaInN are very important for many device properties such as power efficiency, amplification, noise, device heating, and reliability. In this work, a fundamentally novel approach to low-resistance ohmic contacts to AlGaN, GaInN, and GaN will be developed and investigated. The contacts are based on the employment of the strong spontaneous and piezoelectric polarization fields occurring in GaN and related compounds. The polarization fields in the near-surface layers of metal-semiconductor contacts will enhance the tunneling probability of carriers thereby reducing the ohmic contact specific resistance. The theory and modeling pertaining to tunneling probability, contact formation, and specific contact resistance will be developed. Polarization-enhanced contacts will be demonstrated and reduced contact resistances will be verified. In addition, the role of polarization fields in AlGaN-GaN superlattices will be investigated and the superlattices will be optimized for ohmic contact applications. An integral part of the work will be the incorporation of the polarization-enhanced ohmic contacts in optoelectronic and electronic devices. Light-emitting diodes (LEDs), in particular LEDs used for high-power illumination applications, are in need of low resistance ohmic contacts in order to reduce device heating and improve device efficiency and reliability. GaN/GaInN LEDs with polarization-enhanced ohmic contacts will be demonstrated. Polarization-enhanced ohmic contacts will also be realized in lasers and transistors and improved properties of these devices will be demonstrated.******************************************************************

n 型和 p 型 GaN、AlGaN 和 GaInN 欧姆接触的电阻率对于功率效率、放大、噪声、器件发热和可靠性等许多器件特性非常重要。在这项工作中，我们将开发和研究一种针对 AlGaN、GaInN 和 GaN 的低电阻欧姆接触的全新方法。该接触基于 GaN 及相关化合物中产生的强自发极化场和压电极化场的利用。金属-半导体接触近表面层的极化场将增强载流子的隧道概率，从而降低欧姆接触比电阻。将开发有关隧道概率、接触形成和特定接触电阻的理论和模型。将演示极化增强接触，并验证降低的接触电阻。此外，还将研究极化场在 AlGaN-GaN 超晶格中的作用，并对超晶格进行优化以用于欧姆接触应用。这项工作的一个组成部分是将偏振增强欧姆接触纳入光电和电子器件中。发光二极管（LED），特别是用于高功率照明应用的LED，需要低电阻欧姆接触，以减少器件发热并提高器件效率和可靠性。将展示具有偏振增强欧姆接触的 GaN/GaInN LED。偏振增强欧姆接触也将在激光器和晶体管中实现，并且将展示这些设备的改进性能。**************************** ******************************************