Sub-micron 3-D Electric Field Mapping in GaN Electronic Devices

GaN 电子器件中的亚微米 3D 电场测绘

• 批准号: EP/R022739/1
• 负责人: Martin Kuball
• 金额: $ 92.77万
• 依托单位: University of Bristol
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2018
• 资助国家: 英国
• 起止时间: 2018 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FR022739%2F1
• 关键词: Sub; micron; Electric; Field; Mapping

AlGaN/GaN high electron mobility transistors (HEMTs) are a transformative technology for high-power density radio frequency applications, including radar, satellite and mobile communications. In addition, efficient power conversion systems based on GaN devices are a key enabling technology for the low carbon economy, including renewable energy generation and transport electrification. However, their full potential has not yet been realised because performance is de-rated to ensure stable long-term device operation. Experimental characterisation of the electric field distribution in these devices has been lacking, despite being identified as a primary driver of degradation phenomena including breakdown, charge trapping and self-heating. These processes occur in and around the device channel and particularly the sub-micron region under the gate and field plate where peak electric fields are located. The aim of this proposal is a step-change in electric field imaging of semiconductor devices, by developing an optical three dimensional (3-D) device analysis technique with nanometre-scale spatial resolution. The primary focus will be on electric field induced second harmonic generation (EFISHG) combined with solid immersion lenses (SILs). This will enable us to investigate key performance and reliability challenges including (i) the effect of buffer doping on the dynamic distribution of charge in the device layers which causes an undesirable memory effect, (ii) optimization of field plate geometry to manage peak electric fields, (iii) comparing electric field distributions during RF and DC operation to improve reliability forecasts. These are on the critical pathway to achieving a high performance reliable GaN HEMT device technology which exploits the full benefits of the material properties of GaN.

AlGaN/GaN 高电子迁移率晶体管 (HEMT) 是一项适用于高功率密度射频应用（包括雷达、卫星和移动通信）的变革性技术。此外，基于GaN器件的高效功率转换系统是低碳经济的关键使能技术，包括可再生能源发电和交通电气化。然而，它们的全部潜力尚未发挥出来，因为为了确保设备长期稳定运行而降低了性能。尽管这些器件中的电场分布被认为是击穿、电荷捕获和自加热等退化现象的主要驱动因素，但仍缺乏对这些器件电场分布的实验表征。这些过程发生在器件沟道内部和周围，特别是峰值电场所在的栅极和场板下方的亚微米区域。该提案的目的是通过开发具有纳米级空间分辨率的光学三维 (3-D) 器件分析技术，实现半导体器件电场成像的阶跃变化。主要重点是电场感应二次谐波发生 (EFISHG) 与固体浸没透镜 (SIL) 的结合。这将使我们能够研究关键的性能和可靠性挑战，包括（i）缓冲掺杂对器件层中电荷动态分布的影响，从而导致不良的记忆效应，（ii）优化场板几何形状以管理峰值电场，(iii) 比较射频和直流操作期间的电场分布，以改进可靠性预测。这些是实现高性能、可靠的 GaN HEMT 器件技术的关键途径，该技术充分利用了 GaN 材料特性的优势。

项目成果

Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer

GaN RF HEMT 中的电流崩塌和扭结效应：外延缓冲器的关键作用

• DOI: http://dx.10.1109/bcicts48439.2020.9392966
• 发表时间: 2020
• 作者: Uren M

Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution

亚微米分辨率宽带隙半导体器件的电场测绘

• DOI: http://dx.10.1038/s41928-021-00599-5
• 发表时间: 2021
• 期刊: Nature Electronics
• 影响因子: 34.3
• 作者: Cao Y

Design and Manufacture of Edge Termination in Vertical GaN Diodes: Electric Field Distribution Probed by Second Harmonic Generation

垂直 GaN 二极管边缘终端的设计和制造：通过二次谐波产生探测电场分布

• 发表时间: 2022
• 期刊: 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022
• 作者: Cao Y.

Submicrometer Resolution Hyperspectral Quantum Rod Thermal Imaging of Microelectronic Devices

微电子器件的亚微米分辨率高光谱量子棒热成像

• DOI: 10.1021/acsaelm.9b00575
• 发表时间: 2019-12-03
• 期刊: ACS Applied Electronic Materials
• 影响因子: 4.7
• 作者: Bahar Öner;J. Pomeroy;M. Kuball
• 通讯作者: M. Kuball

Impact of carbon in the buffer on power switching GaN-on-Si and RF GaN-on-SiC HEMTs

缓冲器中碳对功率开关 GaN-on-Si 和 RF GaN-on-SiC HEMT 的影响

• DOI: 10.35848/1347-4065/abdb82
• 发表时间: 2021-02-03
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: M. Uren;Martin Kuball
• 通讯作者: Martin Kuball