Underpinning Power Electronics switch optimisation Theme

支撑电力电子开关优化主题

• 批准号: EP/R00448X/1
• 负责人: Peter Gammon
• 金额: $ 152.18万
• 依托单位: University of Warwick
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2018
• 资助国家: 英国
• 起止时间: 2018 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FR00448X%2F1
• 关键词: Underpinning; Power; Electronics; switch; optimisation

Silicon carbide (SiC) N-channel IGBTs have the potential to enable new and highly efficient ultrahigh voltage (10 kV+) applications such as the Smart Grid and HVDC, enabling a low carbon society. However, to date, only four research groups have reported on their successful development, due to the considerable challenge associated with their fabrication. Exploiting a consortium made up of experts from the fields of SiC materials, simulation and fabrication, and building on a recent history of SiC MOSFET, Si IGBT and SiC materials research, the aim of the Switch Optimisation theme of Underpinning Power Electronics is to be amongst the first groups in Europe and the world to develop these devices, and to push the boundaries of what has been achieved in this fledgling field to date. Once a quality benchmarked ~15 kV SiC IGBT process is developed as the first milestone in this project, the process will be modified to explore areas not to-date explored, including the development of lower voltage (5-10 kV) SiC IGBTs benchmarked to SiC MOSFETs, trench SiC IGBTs, and novel topologies such as hybrid SiC MOSFET-IGBTs. The consortium will all work together towards these ambitious goals, with the work packages split by expertise (materials development, simulation, fabrication and testing) to cut across each of the objectives.

碳化硅 (SiC) N 沟道 IGBT 具有实现智能电网和 HVDC 等新型高效超高压 (10 kV+) 应用的潜力，从而实现低碳社会。然而，迄今为止，由于其制造面临相当大的挑战，只有四个研究小组报告了其成功开发。利用由 SiC 材料、仿真和制造领域的专家组成的联盟，并以 SiC MOSFET、Si IGBT 和 SiC 材料研究的最新历史为基础，支撑电力电子的开关优化主题的目标是跻身其中欧洲和世界上第一批开发这些设备的团队，并突破了这一新兴领域迄今为止所取得的成就。一旦开发出以质量为基准的约 15 kV SiC IGBT 工艺作为该项目的第一个里程碑，该工艺将被修改以探索迄今为止尚未探索的领域，包括开发以SiC MOSFET、沟槽 SiC IGBT 以及混合 SiC MOSFET-IGBT 等新颖拓扑。该联盟将共同努力实现这些雄心勃勃的目标，工作包按专业知识（材料开发、模拟、制造和测试）划分，以实现每个目标。

项目成果

Optimization of 1700-V 4H-SiC Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization

具有植入 P 柱的 1700V 4H-SiC 超结肖特基整流器的优化以实现实际实现

• DOI: http://dx.10.1109/ted.2021.3083241
• 发表时间: 2021
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: Baker G

Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement

碳化硅 n-IGBT：结构优化以增强耐用性

• DOI: http://dx.10.1109/tia.2024.3354870
• 发表时间: 2024
• 期刊: IEEE Transactions on Industry Applications
• 影响因子: 4.4
• 作者: Almpanis I

Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment

采用高温氧化处理延长 4H-SiC PiN 二极管的使用寿命

• DOI: http://dx.10.4028/www.scientific.net/msf.924.440
• 发表时间: 2018
• 期刊: Materials Science Forum
• 作者: Bonyadi Y

10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency

10kV 额定值 SiC n-IGBT：新颖的集电极侧设计方法打破了 dV/dt 和器件效率之间的权衡

• DOI: 10.4028/p-21h5lt
• 发表时间: 2023-05-25
• 期刊: Key Engineering Materials
• 作者: Ioannis Almpanis;Paul Evans;M. Antoniou;P. Gammon;L. Empringham;F. Udrea;P. Mawby;Neophytos Lophithis
• 通讯作者: Neophytos Lophithis

Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars

植入P柱的4H-SiC超结肖特基整流器的研究

• DOI: http://dx.10.4028/www.scientific.net/msf.963.539
• 发表时间: 2019
• 期刊: Materials Science Forum
• 作者: Baker G