Underpinning Power Electronics 2017: Heterogeneous Integration

2017 年电力电子基础：异构集成

基本信息

批准号：
EP/R004501/1
负责人：
Lee Empringham
金额：
$ 172.65万
依托单位：
University of Nottingham
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2017
资助国家：
英国
起止时间：
2017 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FR004501%2F1
关键词：
Underpinning Power Electronics 2017 Heterogeneous

项目摘要

Power Electronics has been identified as a high priority area for investment by EPSRC due to its pivotal role in delivering many low carbon technologies from electric vehicles to renewable energy generation, distribution and Smart Grid implementation. Further, the use of wide bandgap semiconductors offer many advantages for power conversion in terms of increased efficiency, high temperature operation, reduced weight and volume and reduced costs. The effective exploitation of wide-bandgap (WBG) semiconductors such as Silicon Carbide (SiC) or Gallium Nitride (GAN) however offer significant challenges in terms of the electrical and management. The efficient operation of WBG devices at higher switching frequencies demands increased voltage and current transition rates and as such, the size and shape of traditional power module layouts become a much larger problem. The problems associated with electro-magnetic interference also increase. The present state of the art in terms of design and construction for power converters are inherently limited in this respect, largely since these technologies are specifically developed for Silicon based semiconductor devices and new methodologies are needed. The way in which power conversion is addressed needs to be changed. Design and manufacturing methodologies which include everything from switching devices through to system level connections are needed in order to fully benefit from the advertised advantages of WBG devices. As switching speeds increase, it is envisaged that the physical size of the switching cells needs to decrease in order to capitalise on the benefits. In order to do this, more and more of the components or functionalities which traditionally sit outside the power semiconductor packages, will need to be integrated into single objects. 'Heterogeneous Integration' can be loosely described as 'the combination of dis-similar materials and components to create multi-featured, functional blocks or 'systems' and as such, this project theme, as part of the Centre for Power Electronics, will address aspects related to the inclusion of components more traditionally seen at a system level, within new and innovative power module structures. The outcomes of this research will underpin the effective use of Wide Band-Gap (WBG) semiconductors within power electronic converters. This research, as part of the Centre for Power Electronics, will underpin the future usage of wide bandgap power semiconductors. The technologies and research addressed within this topic will generate a cost effective, high volume manufacturing methodology for the manufacture of highly optimised commutation cells which can then be used by the system designer to create a multitude of power converter sizes and topologies without the need for bespoke engineering for each new product. This technology will not only reduce the problems associated with Electro-Magnetic Interference (EMI) or thermal management of the system but will also create a much easier to use 'system block' for the designer and as such will accelerate the uptake of WBG semiconductors together with the benefits in terms of reductions in raw material usage and increased energy savings that that will bring. The resulting methodologies and technologies will give the UK a strategic advantage with respect to the state of the art of power converter design and construction and will help keep it at the leading edge as a provider of power system solutions for automotive, aerospace, renewable energies, industrial processing and consumer white goods.

电力电子已被 EPSRC 确定为优先投资领域，因为它在提供从电动汽车到可再生能源发电、配电和智能电网实施等许多低碳技术方面发挥着关键作用。此外，宽带隙半导体的使用在提高效率、高温操作、减轻重量和体积以及降低成本方面为功率转换提供了许多优势。然而，碳化硅 (SiC) 或氮化镓 (GAN) 等宽带隙 (WBG) 半导体的有效利用在电气和管理方面提出了重大挑战。 WBG 器件在更高开关频率下的高效运行需要更高的电压和电流转换速率，因此，传统电源模块布局的尺寸和形状成为一个更大的问题。与电磁干扰相关的问题也随之增加。功率转换器的设计和构造方面的现有技术在这方面本质上受到限制，很大程度上是因为这些技术是专门为硅基半导体器件开发的并且需要新的方法。解决功率转换问题的方式需要改变。为了充分受益于宽带隙器件所宣传的优势，需要包括从开关器件到系统级连接的所有设计和制造方法。随着开关速度的增加，可以预见的是，开关单元的物理尺寸需要减小，以便充分利用这些好处。为了做到这一点，越来越多传统上位于功率半导体封装之外的组件或功能需要集成到单个对象中。 “异构集成”可以粗略地描述为“不同材料和组件的组合，以创建多功能的功能块或“系统”，因此，作为电力电子中心的一部分，该项目主题将解决与在新的和创新的电源模块结构中包含更传统的系统级组件有关的方面。这项研究的成果将支持宽带隙（WBG）半导体在电力电子转换器中的有效使用。这项研究作为电力电子中心的一部分，将支持宽带隙功率半导体的未来使用。本主题中讨论的技术和研究将产生一种具有成本效益的大批量制造方法，用于制造高度优化的换向单元，然后系统设计人员可以使用该方法来创建多种功率转换器尺寸和拓扑，而无需定制每个新产品的工程设计。该技术不仅可以减少与电磁干扰 (EMI) 或系统热管理相关的问题，还可以为设计人员创建更易于使用的“系统模块”，因此将加速 WBG 半导体的采用其好处是减少原材料使用和增加能源节约。由此产生的方法和技术将使英国在最先进的电源转换器设计和建造方面具有战略优势，并将有助于保持其作为汽车、航空航天、可再生能源、电力系统解决方案提供商的领先地位。工业加工和白色消费品。