Silicon-Silicon Carbide (Si/SiC) Power Devices for high temperature, hostile environment applications

适用于高温、恶劣环境应用的硅-碳化硅 (Si/SiC) 功率器件

• 批准号: EP/N00647X/1
• 负责人: Peter Gammon
• 金额: $ 12.62万
• 依托单位: University of Warwick
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2015
• 资助国家: 英国
• 起止时间: 2015 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FN00647X%2F1
• 关键词: Silicon; Carbide; Si; SiC; Power

Several problems facing society in the 21st century share a common problem: that when electronic devices heat up, they become inefficient, wasting energy. It is therefore the case that in your laptop there is significant space, weight and significant design cost associated with implementing the right cooling system to efficiently extract the heat. The laptop is however, a relatively low-power system, operating on earth at a rather pleasant 20C room temperature. Engineers are regularly facing this problem on a much larger scale, in much ambient temperatures, and in a situation where it is often difficult, expensive and often highly impractical to implement active cooling. Oil and gas engineers, attempting to harvest the fossil fuels we are still highly dependent on, face exactly this problem with the electronics that are driving the cutting tool motor. Power electronic devices delivering hundreds of Watts of power to the motor must do so in an ambient that can exceed 225C, operating miles under the ground with only slurry pumped from the surface to cool the devices. Similarly, electric cars are forced into restrictive design choices keeping the electronics as far from the engine as possible to minimise the cooling requirements. In space, near-sun planetary explorers are essentially floating refrigerators, the inner cabin cooled, at great cost to eventual mission length, down to earth-like temperatures when the temperature outside can exceed 300C around Venus or Mercury. The potential benefit for having electronics operating in these environments without cooling is huge, leading to greater efficiency, reliability and mission length, saving space, weight and importantly cost.This project looks to redesign the silicon device and to push its thermal behaviour to the absolute limit, so minimising the need for cooling, or eliminating it entirely. This is to be done by combining it with another material, silicon carbide, that will act as a heat sink placed within fractions of a micro-meter of the active device itself. These new Silicon-on-Silicon Carbide (Si/SiC) devices are expected to offer gains in device efficiency over any existing silicon device operating at elevated temperature. Alternatively, the same level of performance could be retained as with existing solutions, except at temperatures as much as 100C higher, or at much higher power (as much as 4x). The power transistor, implemented entirely with the silicon thin film, is a laterally-diffused metal-oxide-semiconductor field effect transistor (LD-MOS) or a lateral insulated gate bipolar transistor (L-IGBT), similar to those that have been developed for silicon on insulator (SOI) or silicon-on-sapphire. These devices shall be optimised for breakdown voltages rated from 50 to 600 V, making the devices ideal for applications such as downhole motor drives required by project partner Halliburton, and for solar array inverters destined for space.

21世纪社会面临的几个问题有一个共同的问题：当电子设备升温时，它们会变得低效，浪费能源。因此，在您的笔记本电脑中，采用正确的冷却系统来有效地排出热量会占用大量的空间、重量和大量的设计成本。然而，笔记本电脑是一个功耗相对较低的系统，在地球上运行时的室温相当宜人，为 20 摄氏度。工程师经常在更大的范围内、在很多环境温度下以及在实施主动冷却通常很困难、昂贵且通常非常不切实际的情况下面临这个问题。石油和天然气工程师在试图获取我们仍然高度依赖的化石燃料时，正面临着驱动切削工具电机的电子设备的这个问题。向电机提供数百瓦功率的电力电子设备必须在超过 225°C 的环境下工作，在地下数英里处运行，仅从地表泵送浆料来冷却设备。同样，电动汽车被迫做出限制性的设计选择，使电子设备尽可能远离发动机，以最大限度地减少冷却要求。在太空中，近日行星探测器本质上是漂浮的冰箱，当金星或水星周围的外部温度可能超过 300 摄氏度时，内部舱会被冷却，最终的任务长度会付出巨大的代价，温度会降至与地球相似的温度。让电子设备在这些环境中运行而无需冷却的潜在好处是巨大的，从而提高效率、可靠性和任务长度，节省空间、重量和重要的成本。该项目着眼于重新设计硅器件，并将其热行为推向绝对极限。限制，从而最大限度地减少冷却需求，或完全消除冷却需求。这是通过将其与另一种材料碳化硅结合来完成的，碳化硅将充当放置在有源器件本身几分之一微米内的散热器。这些新型碳化硅上硅 (Si/SiC) 器件预计将比在高温下运行的任何现有硅器件提高器件效率。或者，除了温度高出 100°C 或功率高得多（高达 4 倍）之外，可以保持与现有解决方案相同的性能水平。功率晶体管完全采用硅薄膜实现，是横向扩散金属氧化物半导体场效应晶体管（LD-MOS）或横向绝缘栅双极晶体管（L-IGBT），与已开发的类似。适用于绝缘体上硅 (SOI) 或蓝宝石上硅。这些器件应针对 50 至 600 V 的额定击穿电压进行优化，使这些器件非常适合项目合作伙伴 Halliburton 所需的井下电机驱动器以及用于太空的太阳能电池阵列逆变器等应用。

项目成果

Analysis of Linear-Doped Si/SiC Power LDMOSFETs Based on Device Simulation

基于器件仿真的线性掺杂 Si/SiC 功率 LDMOSFET 分析

• DOI: 10.1109/ted.2016.2550865
• 发表时间: 2016-04-20
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: C. Chan;P. Mawby;P. Gammon
• 通讯作者: P. Gammon

Si/SiC Substrates for the Implementation of Linear-Doped Power LDMOS Studied with Device Simulation

通过器件仿真研究用于实现线性掺杂功率 LDMOS 的 Si/SiC 衬底

• DOI: http://dx.10.4028/www.scientific.net/msf.858.844
• 发表时间: 2016
• 期刊: Materials Science Forum
• 作者: Chan C

Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

用于空间应用的碳化硅衬底和功率器件的设计和制造

• DOI: http://dx.10.1051/e3sconf/20171612003
• 发表时间: 2017
• 期刊: E3S Web of Conferences
• 作者: Gammon P

Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs

商用 SiC MOSFET 的低温表征和建模

• DOI: 10.4028/www.scientific.net/msf.897.557
• 发表时间: 2016-09-01
• 期刊: Materials Science Forum
• 作者: Lee J. Woodend;P. Gammon;V. Shah;A. Pérez‐Tomás;Fan Li;D. Hamilton;M. Myronov;P. Mawby
• 通讯作者: P. Mawby

Numerical Study of Energy Capability of Si/SiC LDMOSFETs

Si/SiC LDMOSFET 能量能力的数值研究

• DOI: http://dx.10.4028/www.scientific.net/msf.897.751
• 发表时间: 2017
• 期刊: Materials Science Forum
• 作者: Chan C