Underpinning Power Electronics 2012: Devices Theme

2012 年电力电子基础：设备主题

• 批准号: EP/L007010/1
• 负责人: Phil Mawby
• 金额: $ 251.98万
• 依托单位: University of Warwick
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2013
• 资助国家: 英国
• 起止时间: 2013 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FL007010%2F1
• 关键词: Underpinning; Power; Electronics; 2012; Devices

This programme is part of the EPSRC project on Underpinning power electronics. It is one of four main research themes supporting the centre (along with integrated components, Converters and Integrated Drives) and focuses on the basic building block of power electronics, namely the semiconductor components. The aim is to enable a step-change in the state of the art. By enabling the development of new technology, gaining deeper theoretical insight into the physics of failure, building predictive reliability models and compact models, this programme will be of direct benefit to the central hub and the other themes as well as supporting and stimulating UK manufacturing industries in the area of power electronics and providing internationally leading research output.

该计划是 EPSRC 电力电子基础项目的一部分。它是支持该中心的四个主要研究主题之一（其他三个是集成组件、转换器和集成驱动器），重点关注电力电子的基本构建模块，即半导体组件。其目的是实现现有技术的进步。通过促进新技术的发展，获得对故障物理的更深入的理论洞察，建立预测可靠性模型和紧凑模型，该计划将为中心枢纽和其他主题以及支持和刺激英国制造业带来直接利益在电力电子领域提供国际领先的研究成果。

项目成果

Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors

AlGaN/GaN 高电子迁移率晶体管断态退化的时间演化

• DOI: http://dx.10.1063/1.4881637
• 发表时间: 2014
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Bajo M

Progress in Engineering Technology II

工程技术进展二

• DOI: http://dx.10.1007/978-3-030-46036-5_8
• 发表时间: 2020
• 作者: Arof S

Investigating the reliability of SiC MOSFET body diodes using Fourier series modelling

使用傅立叶级数建模研究 SiC MOSFET 体二极管的可靠性

• DOI: 10.1109/ecce.2014.6953427
• 发表时间: 2014-11-13
• 期刊: 2014 IEEE Energy Conversion Congress and Exposition (ECCE)
• 作者: R. Bonyadi;O. Alatise;S. Jahdi;J. Hu;L. Evans;P. Mawby
• 通讯作者: P. Mawby

Progress in Engineering Technology II

工程技术进展二

• DOI: http://dx.10.1007/978-3-030-46036-5_10
• 发表时间: 2020
• 作者: Arof S

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

沟槽绝缘栅双极晶体管等离子体增强的新方法

• DOI: 10.1109/led.2015.2433894
• 发表时间: 2015-05-15
• 期刊: IEEE Electron Device Letters
• 影响因子: 4.9
• 作者: M. Antoniou;N. Lophitis;F. Bauer;I. Nistor;M. Bellini;Munaf T. A. Rahimo;G. Amaratunga;F. Udrea
• 通讯作者: F. Udrea