Electronic-Photonic Convergence: A Platform Grant

电子光子融合：平台资助

• 批准号: EP/N013247/1
• 负责人: Graham Reed
• 金额: $ 188.29万
• 依托单位: University of Southampton
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2016
• 资助国家: 英国
• 起止时间: 2016 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FN013247%2F1
• 关键词: Electronic; Photonic; Convergence; Platform; Grant

The theme of this platform grant is electronic-photonic convergence. It underpins expertise in integrated photonics platforms such as silicon photonics, mid-IR photonics, non-linear photonics and high speed electronics, all of which make use of a common fabrication platform. The convergence of electronics and photonics underpins a host of technologies ranging from future internet to consumer products, and from biological and chemical sensing to communications. The integration of electronics and photonics is recognised as the only way to manage the massive data demands of the future, and is consequently crucial to the continuation of the digital age. Silicon Photonics is an example of an emerging technology that will bring photonics to mass markets via integration with electronics. Integrated silicon systems are projected to serve a market in excess of $700M by 2024 (Yole Development, 2014), but is reliant on photonics converging with electronics. Furthermore, some aspects of silicon photonics will encompass non-linear photonics in second generation devices for all optical processing in a fully integrated platform. Similarly, related technologies such as SiGe-on-Insulator and Ge-on-Insulator are poised to revolutionise the next generation of communications and integrated sensor technologies, all on an integrated platform with electronics and non-linear photonics. Underpinning a team in these crucial areas of expertise supported by a flexible funding platform will enable us to pioneer work in these technology areas, and to add value to ideas that emerge.The convergence of electronics and photonics will result in complex integrated systems, linked via fabrication technologies. Electronic-photonic integration has yet to be addressed in a meaningful way in silicon based technologies, and this team collectively have the essential skills to do so, at an institution that possesses the key fabrication equipment to facilitate success. Due to the complex nature of fabrication for research, existing RAs are fully utilised, and have little or no additional scope for strategic research. The platform grant will give us the opportunity to dedicate fabrication resource and RA skills to strategic projects, and specific innovation. We will do this by utilising the RAs within the project to deliver work of significant strategic importance to the portfolio of grants held by the group, whilst also developing the research and managerial skills of the RAs by giving them specific management responsibilities whilst being mentored by one of the investigators.

该平台赠款的主题是电子光收敛。它基于集成光子学平台的专业知识，例如硅光子学，MID-IR光子学，非线性光子学和高速电子产品，所有这些都利用了共同的制造平台。电子和光子学的融合基础是从未来的互联网到消费产品的许多技术，从生物和化学感应到通信。电子和光子学的整合被认为是管理未来大规模数据需求的唯一途径，因此对于数字时代的延续至关重要。 Silicon Photonics是一种新兴技术的示例，它将通过与电子产品集成将光子学带入大众市场。预计到2024年，综合硅系统将为超过7亿美元的市场服务（Yole Development，2014年），但依赖于与电子产品融合的光子学。此外，硅光子学的某些方面将涵盖第二代设备中的非线性光子学，用于完全集成的平台中的所有光学处理。同样，诸如sige-on-on-unsulator和ge-on-unsulator之类的相关技术有望彻底改变下一代通信和集成的传感器技术，所有这些都在带有电子和非线性光子学的集成平台上。在这些至关重要的专业知识领域的团队支持灵活的资金平台支持的团队将使我们能够在这些技术领域的开创性工作，并为出现的想法增加价值。电子和光子学的融合将导致通过制造技术链接的复杂集成系统。在基于硅技术的技术中，电子光整合尚未以有意义的方式来解决，并且该团队在拥有促进成功的关键制造设备的机构中统称具有重要的技能来实现这一目标。由于用于研究的制造性质复杂，因此现有的RA被充分利用，几乎没有或没有其他或没有额外的战略研究范围。平台赠款将使我们有机会将制造资源和RA技能专门用于战略项目以及特定的创新。我们将通过利用该项目中的RAS来为小组持有的赠款投资组合提供重要战略重要性的工作，同时还通过赋予他们特定的管理职责，同时由一名调查人员指导他们的RAS的研究和管理技能。

项目成果

Silicon Nitride Photonics for the Near-Infrared

• DOI: 10.1109/jstqe.2019.2934127
• 发表时间: 2020-03-01
• 期刊: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
• 影响因子: 4.9
• 作者: Bucio, Thalia Dominguez;Lacava, Cosimo;Gardes, Frederic
• 通讯作者: Gardes, Frederic

Low-Temperature NH3-Free Silicon Nitride Platforms for Integrated Photonics

用于集成光子学的低温无 NH3 氮化硅平台

• DOI: 10.1109/group4.2018.8478748
• 发表时间: 2018
• 作者: Bucio T

Non-isothermal phase-field simulations of laser-written in-plane SiGe heterostructures for photonic applications

• DOI: 10.1038/s42005-021-00632-1
• 发表时间: 2021-06-11
• 期刊: COMMUNICATIONS PHYSICS
• 影响因子: 5.5
• 作者: Aktas, Ozan;Yamamoto, Yuji;Peacock, Anna C.
• 通讯作者: Peacock, Anna C.

Sub-kHz linewidth, hybrid III-V/silicon wavelength-tunable laser diode operating at the application-rich 1647-1690 nm.

• DOI: 10.1364/oe.400666
• 发表时间: 2020-08
• 期刊: Optics express
• 影响因子: 3.8
• 作者: Jia Xu Brian Sia;Xiang Li;Wanjun Wang;Z. Qiao;Xin Guo;Jin Zhou;C. Littlejohns;Chongyang Liu;G. Reed;Hong Wang

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

• DOI: 10.1002/adpr.202000159
• 发表时间: 2021-07-01
• 期刊: ADVANCED PHOTONICS RESEARCH
• 作者: Aktas, Ozan;Peacock, Anna C.
• 通讯作者: Peacock, Anna C.