Electric field control of opical transitions in semiconductor superlattice spaces

半导体超晶格空间中光学跃迁的电场控制

基本信息

批准号：
09831003
负责人：
FUJIWARA Kenzo
金额：
$ 1.28万
依托单位：
KYUSHU INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09831003/
关键词：
semiconductor superlattice quantum structure Photocurrent spectra optical transition Stark effect excitonic effect photoelectric effect resonant tunneling 励起+効果

项目摘要

In order to pursue the electric-field controlability of optical transitions in semiconductor quantum structures, three different-types of GaAs/AIAs superlattices have been investigated and the following results are obtained.1. Electric field effects on optical transitions in an asymmetric double-well superlatticeFor a new-type biperiodic superlattice consisting of asymmetric double-well pairs in a unit period, anticrossings as well as excitonic effects of the optical transitions have been observed and clarified, originating from the resonant coupling between the Stark-ladder states belonging to the wider and narrower wells.2. Electric field effects on optical transitions in a perfectly asymmetric double period superlatticeFor a new-type of perfectly asymmetric superlattice having the well and barrier biperiodicity, the observed transition energy fan diagram and enhanced anticrossings due to stronger couplings through the thinner barriers have been elucidated in the light of theoretical calculations of the confined eigenenergies and the oscillator strengths based on the transfer matrix method.3. Electric field control of optical transitions due to interactions between superlattice ladder and single quantum well statesElectron as well as hole resonances controlled by the applied electric field have been observed in the optical absorption spectra of a monoperiodic superlattice which contains an isolated single quantum well in the middle, and analyzed with the help of transfer matrix calculations within the effective mass approximation.

为了追求半导体量子结构中光跃迁的电场可控性，对三种不同类型的GaAs/AIAs超晶格进行了研究，得到了以下结果： 1．电场对非对称双阱超晶格中光学跃迁的影响对于单位周期内由非对称双阱对组成的新型双周期超晶格，观察并阐明了光学跃迁的反交叉和激子效应，源于属于较宽和较窄井的斯塔克梯态之间的共振耦合。2．电场对完全不对称双周期超晶格中光学跃迁的影响对于具有阱和势垒双周期性的新型完全不对称超晶格，观察到的跃迁能量扇形图和由于穿过更薄势垒的更强耦合而增强的反交叉已经在基于传递矩阵法对受限本征能和振子强度进行了理论计算。 3．由于超晶格梯和单量子阱态之间的相互作用对光学跃迁的电场控制在单周期超晶格的光学吸收光谱中观察到了由施加电场控制的电子和空穴共振，该单周期超晶格在中间包含一个孤立的单量子阱，并借助有效质量近似内的传递矩阵计算进行分析。