Electric field control of opical transitions in semiconductor superlattice spaces

半导体超晶格空间中光学跃迁的电场控制

基本信息

批准号：
09831003
负责人：
FUJIWARA Kenzo
金额：
$ 1.28万
依托单位：
KYUSHU INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09831003/
关键词：
semiconductor superlattice quantum structure Photocurrent spectra optical transition Stark effect excitonic effect photoelectric effect resonant tunneling 励起+効果

项目摘要

In order to pursue the electric-field controlability of optical transitions in semiconductor quantum structures, three different-types of GaAs/AIAs superlattices have been investigated and the following results are obtained.1. Electric field effects on optical transitions in an asymmetric double-well superlatticeFor a new-type biperiodic superlattice consisting of asymmetric double-well pairs in a unit period, anticrossings as well as excitonic effects of the optical transitions have been observed and clarified, originating from the resonant coupling between the Stark-ladder states belonging to the wider and narrower wells.2. Electric field effects on optical transitions in a perfectly asymmetric double period superlatticeFor a new-type of perfectly asymmetric superlattice having the well and barrier biperiodicity, the observed transition energy fan diagram and enhanced anticrossings due to stronger couplings through the thinner barriers have been elucidated in the light of theoretical calculations of the confined eigenenergies and the oscillator strengths based on the transfer matrix method.3. Electric field control of optical transitions due to interactions between superlattice ladder and single quantum well statesElectron as well as hole resonances controlled by the applied electric field have been observed in the optical absorption spectra of a monoperiodic superlattice which contains an isolated single quantum well in the middle, and analyzed with the help of transfer matrix calculations within the effective mass approximation.

为了追求半导体量子结构中光学转变的电场可控制性，已经研究了三种不同的GAAS/AIAS超晶格，并获得了以下结果。1。 Electric field effects on optical transitions in an asymmetric double-well superlatticeFor a new-type biperiodic superlattice consisting of asymmetric double-well pairs in a unit period, anticrossings as well as excitonic effects of the optical transitions have been observed and clarified, originating from the resonant coupling between the Stark-ladder states belonging to the wider and narrower wells.2.电场对光学过渡的电场影响在完全不对称的双时期超弹位中，具有具有良好和屏障双层型的完美不对称的超级远程晶体的新型，观察到的过渡能量扇形图并增强了由于较薄的范围而导致的强度，并且由于较薄的限制而导致的抗逆性增强了，这是在较薄的范围内的限制，而Eig的限制是限制的。传输矩阵方法3。由于超晶格梯子与单个量子井状状态电源之间的相互作用以及由应用电场控制的孔共振引起的电场控制，在单过程超级晶格的光吸收光谱中观察到，其中包含一个中间的隔离单量子孔，并在中间的单个量子孔中进行了分析，并在转移的范围内分析了近似于质量的质量质量群体。